IPI100P03P3L-04
MOSFET. Datasheet pdf. Equivalent
Type Designator: IPI100P03P3L-04
Marking Code: 3P03L04
Type of Transistor: MOSFET
Type of Control Channel: P
-Channel
Pdⓘ
- Maximum Power Dissipation: 200
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 16
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.1
V
|Id|ⓘ - Maximum Drain Current: 100
A
Tjⓘ - Maximum Junction Temperature: 175
°C
Qgⓘ - Total Gate Charge: 150
nC
trⓘ - Rise Time: 45
nS
Cossⓘ -
Output Capacitance: 2150
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0043
Ohm
Package:
TO262
IPI100P03P3L-04
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IPI100P03P3L-04
Datasheet (PDF)
0.1. Size:195K infineon
ipb100p03p3l-04 ipi100p03p3l-04 ipp100p03p3l-04.pdf 
IPB100P03P3L-04IPI100P03P3L-04, IPP100P03P3L-04OptiMOS-P Trench Power-TransistorProduct SummaryV -30 VDSFeaturesR (SMD version) 4mDS(on),max P-channel - Logic Level - Enhancement mode Automotive AEC Q101 qualified I -100 AD MSL1 up to 260C peak reflowPG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 175C operating temperature Green package (RoHS Comp
8.1. Size:186K infineon
ipb100n10s3-05 ipi100n10s3-05 ipp100n10s3-05.pdf
IPB100N10S3-05IPI100N10S3-05, IPP100N10S3-05OptiMOS-T Power-TransistorProduct SummaryV 100 VDSR (SMD version) 4.8mDS(on),max I 100 ADFeaturesPG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 N-channel - Enhancement mode Automotive AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green product (RoHS compliant) 100% Aval
8.2. Size:159K infineon
ipp100n04s4-h2 ipb100n04s4-h2 ipi100n04s4-h2.pdf
IPB100N04S4-H2IPI100N04S4-H2, IPP100N04S4-H2OptiMOS-T2 Power-TransistorProduct SummaryV 40 VDSR (SMD version) 2.4mDS(on),max I 100 ADFeaturesPG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 N-channel - Enhancement mode AEC qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche testedTy
8.4. Size:135K infineon
ipb100n04s4-h2 ipi100n04s4-h2 ipp100n04s4-h2.pdf
IPB100N04S4-H2IPI100N04S4-H2, IPP100N04S4-H2OptiMOS-T2 Power-TransistorProduct SummaryV 40 VDSR (SMD version) 2.4mWDS(on),maxI 100 ADFeaturesPG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 N-channel - Enhancement mode AEC qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche testedType
8.6. Size:193K infineon
ipi100n06s3l-04 ipp100n06s3l-04.pdf
IPB100N06S3L-04IPI100N06S3L-04, IPP100N06S3L-04OptiMOS-T2 Power-TransistorProduct SummaryV 55 VDSR (SMD version) 3.5mDS(on),maxI 100 ADFeatures N-channel - Enhancement modePG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 Automotive AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green product (RoHS compliant) 100% Av
8.8. Size:191K infineon
ipi100n10s3-05 ipp100n10s3-05 ipb100n10s3-05.pdf
IPB100N10S3-05IPI100N10S3-05, IPP100N10S3-05OptiMOS-T Power-TransistorProduct SummaryV 100 VDSR (SMD version) 4.8mDS(on),max I 100 ADFeaturesPG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 N-channel - Enhancement mode Automotive AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green product (RoHS compliant) 100% Aval
8.9. Size:405K infineon
ipb100n12s3-05 ipi100n12s3-05 ipp100n12s3-05.pdf
IPB100N12S3-05IPI100N12S3-05, IPP100N12S3-05OptiMOS-T Power-TransistorProduct Summary VDS 120 V RDS(on),max (SMD version) 4.8 mW ID 100 A Features OptiMOS - power MOSFET for automotive applications N-channel - Enhancement mode Automotive AEC Q101 qualifiedPG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 MSL1 up to 260C peak reflow 175C operating temper
8.10. Size:287K inchange semiconductor
ipi100n08n3.pdf
isc N-Channel MOSFET Transistor IPI100N08N3FEATURESStatic drain-source on-resistance:RDS(on) 9.7mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PAR
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