All MOSFET. IPI22N03S4L-15 Datasheet

 

IPI22N03S4L-15 MOSFET. Datasheet pdf. Equivalent


   Type Designator: IPI22N03S4L-15
   Marking Code: 4N03L15
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 31 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 16 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.2 V
   |Id|ⓘ - Maximum Drain Current: 22 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 11 nC
   trⓘ - Rise Time: 2 nS
   Cossⓘ - Output Capacitance: 190 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0149 Ohm
   Package: TO262

 IPI22N03S4L-15 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IPI22N03S4L-15 Datasheet (PDF)

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 ipb22n03s4l-15 ipi22n03s4l-15 ipp22n03s4l-15 ipp22n03s4l ipb22n03s4l ipi22n03s4l.pdf

IPI22N03S4L-15 IPI22N03S4L-15

IPB22N03S4L-15IPI22N03S4L-15, IPP22N03S4L-15OptiMOS-T2 Power-TransistorProduct SummaryV 30 VDSR (SMD version) 14.6mDS(on),max I 22 ADFeaturesPG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 N-channel - Enhancement mode Automotive AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green product (RoHS compliant) Ultra low

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: QS5U23

 

 
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