IPI80N03S4L-03 Specs and Replacement

Type Designator: IPI80N03S4L-03

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 136 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 16 V

|Id| ⓘ - Maximum Drain Current: 80 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 9 nS

Cossⓘ - Output Capacitance: 1900 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0027 Ohm

Package: TO262

IPI80N03S4L-03 substitution

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IPI80N03S4L-03 datasheet

 ..1. Size:187K  infineon
ipb80n03s4l-02 ipi80n03s4l-03 ipp80n03s4l-03 ipb80n03s4l-02 ipp i80n03s4l 03 ds.pdf pdf_icon

IPI80N03S4L-03

IPB80N03S4L-02 IPI80N03S4L-03, IPP80N03S4L-03 OptiMOS -T2 Power-Transistor Product Summary V 30 V DS R (SMD version) 2.4 m DS(on),max I 80 A D Features PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 N-channel - Enhancement mode Automotive AEC Q101 qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green product (RoHS compliant) Ultra low ... See More ⇒

 ..2. Size:192K  infineon
ipi80n03s4l-03 ipp80n03s4l-03.pdf pdf_icon

IPI80N03S4L-03

IPB80N03S4L-02 IPI80N03S4L-03, IPP80N03S4L-03 OptiMOS -T2 Power-Transistor Product Summary V 30 V DS R (SMD version) 2.4 m DS(on),max I 80 A D Features PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 N-channel - Enhancement mode Automotive AEC Q101 qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green product (RoHS compliant) Ultra low ... See More ⇒

 1.1. Size:192K  infineon
ipb80n03s4l-03 ipi80n03s4l-04 ipp80n03s4l-04.pdf pdf_icon

IPI80N03S4L-03

IPB80N03S4L-03 IPI80N03S4L-04, IPP80N03S4L-04 OptiMOS -T2 Power-Transistor Product Summary V 30 V DS R (SMD version) 3.3 m DS(on),max I 80 A D Features PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 N-channel - Enhancement mode Automotive AEC Q101 qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green product (RoHS compliant) Ultra low ... See More ⇒

 7.1. Size:164K  1
ipb80n08s2-07 ipp80n08s2-07 ipi80n08s2-07.pdf pdf_icon

IPI80N03S4L-03

IPB80N08S2-07 IPP80N08S2-07, IPI80N08S2-07 OptiMOS Power-Transistor Product Summary Features V 75 V DS N-channel - Enhancement mode R (SMD version) 7.1 m DS(on),max Automotive AEC Q101 qualified I 80 A D MSL1 up to 260 C peak reflow 175 C operating temperature PG-TO263-3-2 PG-TO220-3-1 PG-TO262-3-1 Green package (lead free) Ultra low Rds(on) ... See More ⇒

Detailed specifications: IPI45P03P4L-11, IPI47N10S-33, IPI47N10SL-26, IPI50N10S3L-16, IPI70N04S3-07, IPI70N10S3-12, IPI70N10S3L-12, IPI70N10SL-16, IRLB3034, IPI80N03S4L-04, IPI80N04S2-04, IPI80N04S2-H4, IPI80N04S3-03, IPI80N04S3-04, IPI80N04S3-06, IPI80N04S3-H4, IPI80N04S4-04

Keywords - IPI80N03S4L-03 MOSFET specs

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