All MOSFET. IPI80N04S2-H4 Datasheet

 

IPI80N04S2-H4 MOSFET. Datasheet pdf. Equivalent

Type Designator: IPI80N04S2-H4

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 300 W

Maximum Drain-Source Voltage |Vds|: 40 V

Maximum Drain Current |Id|: 80 A

Total Gate Charge (Qg): 148 nC

Maximum Drain-Source On-State Resistance (Rds): 0.004 Ohm

Package: PGTO262

IPI80N04S2-H4 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

IPI80N04S2-H4 Datasheet (PDF)

1.1. ipp80n04s2 ipb80n04s2 ipi80n04s2-h4.pdf Size:190K _infineon

IPI80N04S2-H4
IPI80N04S2-H4

IPB80N04S2-H4 IPP80N04S2-H4, IPI80N04S2-H4 OptiMOS Power-Transistor Product Summary V 40 V DS R (SMD version) 3.7 m? DS(on),max I 80 A D Features N-channel - Enhancement mode PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 Automotive AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Ultra low Rds(on) 100% Avalanche tested Green product (RoHS compl

1.2. ipp80n04s3 ipb80n04s3 ipi80n04s3.pdf Size:188K _infineon

IPI80N04S2-H4
IPI80N04S2-H4

IPB80N04S3-06 IPI80N04S3-06, IPP80N04S3-06 OptiMOS-T Power-Transistor Product Summary V 40 V DS R (SMD version) 5.4 m? DS(on),max I 80 A D Features N-channel - Enhancement mode Automotive AEC Q101 qualified PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 MSL1 up to 260C peak reflow 175C operating temperature Green package (RoHS compliant) 100% Avalanche tested Type Package

 1.3. ipp80n04s4l-04 ipb80n04s4l-04 ipi80n04s4l-04.pdf Size:159K _infineon

IPI80N04S2-H4
IPI80N04S2-H4

IPB80N04S4L-04 IPI80N04S4L-04, IPP80N04S4L-04 OptiMOS-T2 Power-Transistor Product Summary V 40 V DS R (SMD version) 4.0 m? DS(on),max I 80 A D Features PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 N-channel - Enhancement mode AEC qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche tested Type Package Marking I

1.4. ipp80n04s2-04 ipb80n04s2-04 ipi80n04s2-04 green.pdf Size:159K _infineon

IPI80N04S2-H4
IPI80N04S2-H4

IPB80N04S2-04 IPP80N04S2-04, IPI80N04S2-04 OptiMOS Power-Transistor Product Summary Features V 40 V DS N-channel - Enhancement mode R (SMD version) 3.4 m? DS(on),max Automotive AEC Q101 qualified I 80 A D MSL1 up to 260C peak reflow 175C operating temperature PG-TO263-3-2 PG-TO220-3-1 PG-TO262-3-1 Green package (lead free) Ultra low Rds(on) 100% Avalanche tested

 1.5. ipp80n04s3 ipb80n04s3 ipi80n04s3-04.pdf Size:187K _infineon

IPI80N04S2-H4
IPI80N04S2-H4

IPB80N04S3-04 IPI80N04S3-04, IPP80N04S3-04 OptiMOS-T Power-Transistor Product Summary V 40 V DS R (SMD version) 3.8 m? DS(on),max I 80 A D Features N-channel - Enhancement mode Automotive AEC Q101 qualified PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 MSL1 up to 260C peak reflow 175C operating temperature Green package (RoHS compliant) 100% Avalanche tested Type Package

1.6. ipp80n04s4-03 ipb80n04s4-03 ipi80n04s4-03.pdf Size:158K _infineon

IPI80N04S2-H4
IPI80N04S2-H4

IPB80N04S4-03 IPI80N04S4-03, IPP80N04S4-03 OptiMOS-T2 Power-Transistor Product Summary V 40 V DS R (SMD version) 3.3 m? DS(on),max I 80 A D Features PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 N-channel - Enhancement mode AEC qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche tested Type Package Marking IPB8

1.7. ipp80n04s4-04 ipb80n04s4-04 ipi80n04s4-04.pdf Size:160K _infineon

IPI80N04S2-H4
IPI80N04S2-H4

IPB80N04S4-04 IPI80N04S4-04, IPP80N04S4-04 OptiMOS-T2 Power-Transistor Product Summary V 40 V DS R (SMD version) 4.2 m? DS(on),max I 80 A D Features PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 N-channel - Enhancement mode AEC qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche tested Type Package Marking IPB8

Datasheet: IPI50N10S3L-16 , IPI70N04S3-07 , IPI70N10S3-12 , IPI70N10S3L-12 , IPI70N10SL-16 , IPI80N03S4L-03 , IPI80N03S4L-04 , IPI80N04S2-04 , 2SK105 , IPI80N04S3-03 , IPI80N04S3-04 , IPI80N04S3-06 , IPI80N04S3-H4 , IPI80N04S4-04 , IPI80N04S4L-04 , IPI80N06S2-07 , IPI80N06S2-08 .

 
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