IPI80N04S3-03 Spec and Replacement
Type Designator: IPI80N04S3-03
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 188 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 80 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 17 nS
Cossⓘ - Output Capacitance: 1540 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0035 Ohm
Package: TO262
IPI80N04S3-03 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IPI80N04S3-03 Specs
ipb80n04s3-03 ipi80n04s3-03 ipp80n04s3-03 ipb80n04s3-03 ipi80n04s3-03 ipp80n04s3-03 ipp80n04s3 b80n04s3 i80n04s3-03.pdf
IPB80N04S3-03 IPI80N04S3-03, IPP80N04S3-03 OptiMOS -T Power-Transistor Product Summary V 40 V DS R (SMD version) 3.2 m DS(on),max I 80 A D Features N-channel - Enhancement mode Automotive AEC Q101 qualified PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 MSL1 up to 260 C peak reflow 175 C operating temperature Green package (RoHS compliant) Ultra low Rds(on... See More ⇒
ipb80n04s3-04 ipi80n04s3-04 ipp80n04s3-04 ipp80n04s3 ipb80n04s3 ipi80n04s3-04.pdf
IPB80N04S3-04 IPI80N04S3-04, IPP80N04S3-04 OptiMOS -T Power-Transistor Product Summary V 40 V DS R (SMD version) 3.8 m DS(on),max I 80 A D Features N-channel - Enhancement mode Automotive AEC Q101 qualified PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 MSL1 up to 260 C peak reflow 175 C operating temperature Green package (RoHS compliant) 100% Avalanche ... See More ⇒
ipb80n04s3-06 ipi80n04s3-06 ipp80n04s3-06 ipp80n04s3 ipb80n04s3 ipi80n04s3.pdf
IPB80N04S3-06 IPI80N04S3-06, IPP80N04S3-06 OptiMOS -T Power-Transistor Product Summary V 40 V DS R (SMD version) 5.4 m DS(on),max I 80 A D Features N-channel - Enhancement mode Automotive AEC Q101 qualified PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 MSL1 up to 260 C peak reflow 175 C operating temperature Green package (RoHS compliant) 100% Avalanche t... See More ⇒
ipb80n04s3-h4 ipi80n04s3-h4 ipp80n04s3-h4.pdf
IPB80N04S3-H4 IPI80N04S3-H4, IPP80N04S3-H4 OptiMOS -T Power-Transistor Product Summary V 40 V DS R (SMD version) 4.5 m DS(on),max I 80 A D Features N-channel - Enhancement mode Automotive AEC Q101 qualified PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 MSL1 up to 260 C peak reflow 175 C operating temperature Green package (RoHS compliant) 100% Avalanche ... See More ⇒
Detailed specifications: IPI70N04S3-07 , IPI70N10S3-12 , IPI70N10S3L-12 , IPI70N10SL-16 , IPI80N03S4L-03 , IPI80N03S4L-04 , IPI80N04S2-04 , IPI80N04S2-H4 , K2611 , IPI80N04S3-04 , IPI80N04S3-06 , IPI80N04S3-H4 , IPI80N04S4-04 , IPI80N04S4L-04 , IPI80N06S2-07 , IPI80N06S2-08 , IPI80N06S2L-05 .
History: SI4048DY | AMD532C | 2N6787-SM
Keywords - IPI80N04S3-03 MOSFET specs
IPI80N04S3-03 cross reference
IPI80N04S3-03 equivalent finder
IPI80N04S3-03 lookup
IPI80N04S3-03 substitution
IPI80N04S3-03 replacement
Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility
History: SI4048DY | AMD532C | 2N6787-SM
LIST
Last Update
MOSFET: AP3100A | AP30P06K | AP30P06
Popular searches
2n408 | 2sc2690 | d718 datasheet | mp38 transistor | 2sc2389 | b331 transistor | 2sa720 | 2sc1345

