All MOSFET. IPI90N04S4-02 Datasheet

 

IPI90N04S4-02 Datasheet and Replacement


   Type Designator: IPI90N04S4-02
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 150 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 90 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 13 nS
   Cossⓘ - Output Capacitance: 1630 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0025 Ohm
   Package: TO262
 

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IPI90N04S4-02 Datasheet (PDF)

 ..1. Size:163K  infineon
 ipi90n04s4-02 ipp90n04s4-02 ipb90n04s4-02.pdf pdf_icon

IPI90N04S4-02

IPB90N04S4-02IPI90N04S4-02, IPP90N04S4-02OptiMOS-T2 Power-TransistorProduct SummaryV 40 VDSR (SMD version) 2.1mDS(on),max I 90 ADFeaturesPG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 N-channel - Enhancement mode AEC qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche testedType P

 7.1. Size:167K  infineon
 ipi90n06s4-04 ipp90n06s4-04 ipb90n06s4-04.pdf pdf_icon

IPI90N04S4-02

IPB90N06S4-04IPI90N06S4-04, IPP90N06S4-04OptiMOS-T2 Power-TransistorProduct SummaryV 60 VDSR (SMD version) 3.7mDS(on),max I 90 ADFeaturesPG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 N-channel - Enhancement mode AEC qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche testedType P

 7.2. Size:169K  infineon
 ipb90n06s4l-04 ipi90n06s4l-04 ipp90n06s4l-04 ipp90n06s4l ipb90n06s4l ipi90n06s4l-04 ds 10.pdf pdf_icon

IPI90N04S4-02

IPB90N06S4L-04IPI90N06S4L-04, IPP90N06S4L-04OptiMOS-T2 Power-TransistorProduct SummaryV 60 VDSR (SMD version) 3.4mDS(on),max I 90 ADFeatures N-channel - Enhancement modePG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche tested

 7.3. Size:170K  infineon
 ipb90n06s4-04 ipi90n06s4-04 ipp90n06s4-04.pdf pdf_icon

IPI90N04S4-02

IPB90N06S4-04IPI90N06S4-04, IPP90N06S4-04OptiMOS-T2 Power-TransistorProduct SummaryV 60 VDSR (SMD version) 3.7mDS(on),max I 90 ADFeaturesPG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 N-channel - Enhancement mode AEC qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche testedType P

SHOW MORE

Datasheet: IPI80N06S2L-11 , IPI80N06S4-05 , IPI80N06S4-07 , IPI80N06S4L-05 , IPI80N06S4L-07 , IPI80N08S2-07 , IPI80P03P4L-04 , IPI80P03P4L-07 , 50N06 , IPI90N06S4-04 , IPI90N06S4L-04 , IPI023NE7N3G , IPI024N06N3G , IPI028N08N3G , IPI030N10N3G , IPI032N06N3G , IPI034NE7N3G .

History: FDC697P

Keywords - IPI90N04S4-02 MOSFET datasheet

 IPI90N04S4-02 cross reference
 IPI90N04S4-02 equivalent finder
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 IPI90N04S4-02 replacement

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