IPI90N06S4-04 Datasheet and Replacement. Cross Reference Search

..1. Size:167K infineon
ipi90n06s4-04 ipp90n06s4-04 ipb90n06s4-04.pdf pdf_icon

IPB90N06S4-04IPI90N06S4-04, IPP90N06S4-04OptiMOS-T2 Power-TransistorProduct SummaryV 60 VDSR (SMD version) 3.7mDS(on),max I 90 ADFeaturesPG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 N-channel - Enhancement mode AEC qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche testedType P

..2. Size:170K infineon
ipb90n06s4-04 ipi90n06s4-04 ipp90n06s4-04.pdf pdf_icon

IPB90N06S4-04IPI90N06S4-04, IPP90N06S4-04OptiMOS-T2 Power-TransistorProduct SummaryV 60 VDSR (SMD version) 3.7mDS(on),max I 90 ADFeaturesPG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 N-channel - Enhancement mode AEC qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche testedType P

4.1. Size:169K infineon
ipb90n06s4l-04 ipi90n06s4l-04 ipp90n06s4l-04 ipp90n06s4l ipb90n06s4l ipi90n06s4l-04 ds 10.pdf pdf_icon

IPB90N06S4L-04IPI90N06S4L-04, IPP90N06S4L-04OptiMOS-T2 Power-TransistorProduct SummaryV 60 VDSR (SMD version) 3.4mDS(on),max I 90 ADFeatures N-channel - Enhancement modePG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche tested

7.1. Size:163K infineon
ipi90n04s4-02 ipp90n04s4-02 ipb90n04s4-02.pdf pdf_icon

IPB90N04S4-02IPI90N04S4-02, IPP90N04S4-02OptiMOS-T2 Power-TransistorProduct SummaryV 40 VDSR (SMD version) 2.1mDS(on),max I 90 ADFeaturesPG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 N-channel - Enhancement mode AEC qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche testedType P

9.1. Size:259K infineon
ipi90r500c3.pdf pdf_icon

IPI90R500C3CoolMOS Power TransistorProduct SummaryFeaturesV @ T =25C 900 VDS J Lowest figure-of-merit RON x QgR @ T = 25C 0.5DS(on),max J Extreme dv/dt ratedQ 68 nCg,typ High peak current capability Qualified according to JEDEC1) for target applications Pb-free lead plating; RoHS compliantPG-TO262 Ultra low gate chargeCoolMOS 90

9.2. Size:253K infineon
ipi90r340c3.pdf pdf_icon

IPI90R340C3CoolMOS Power TransistorProduct SummaryFeaturesV @ T =25C 900 VDS J Lowest figure-of-merit RON x QgR @T =25C 0.34DS(on),max J Extreme dv/dt ratedQ 94 nCg,typ High peak current capability Qualified according to JEDEC1) for target applications Pb-free lead plating; RoHS compliant Worldwide best R in TO262 (I2Pak)PG-TO262DS

9.3. Size:254K infineon
ipi90r1k0c3.pdf pdf_icon

IPI90R1K0C3CoolMOS Power TransistorProduct SummaryFeaturesV @ T =25C 900 VDS J Lowest figure-of-merit RON x QgR @ T = 25C 1.0DS(on),max J Extreme dv/dt ratedQ 34 nCg,typ High peak current capability Qualified according to JEDEC1) for target applications Pb-free lead plating; RoHS compliantPG-TO262 Ultra low gate chargeCoolMOS 90

9.4. Size:260K infineon
ipi90r1k2c3.pdf pdf_icon

IPI90R1K2C3CoolMOS Power TransistorProduct SummaryFeaturesV @ T =25C 900 VDS J Lowest figure-of-merit RON x QgR @T =25C 1.2DS(on),max J Extreme dv/dt ratedQ 28 nCg,typ High peak current capability Qualified according to JEDEC1) for target applications Pb-free lead plating; RoHS compliantPG-TO262 Ultra low gate chargeCoolMOS 900V

9.5. Size:254K infineon
ipi90r800c3.pdf pdf_icon

IPI90R800C3CoolMOS Power TransistorProduct SummaryFeaturesV @ T =25C 900 VDS J Lowest figure-of-merit RON x QgR @ T = 25C 0.8DS(on),max J Extreme dv/dt ratedQ 42 nCg,typ High peak current capability Qualified according to JEDEC1) for target applications Pb-free lead plating; RoHS compliantPG-TO262 Ultra low gate chargeCoolMOS 90

IPI90N06S4-04 Datasheet (PDF)

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