IPI040N06N3G
MOSFET. Datasheet pdf. Equivalent
Type Designator: IPI040N06N3G
Marking Code: 040N06N
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 188
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4
V
|Id|ⓘ - Maximum Drain Current: 90
A
Tjⓘ - Maximum Junction Temperature: 175
°C
Qgⓘ - Total Gate Charge: 98
nC
trⓘ - Rise Time: 70
nS
Cossⓘ -
Output Capacitance: 1700
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.004
Ohm
Package:
TO262
IPI040N06N3G
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IPI040N06N3G
Datasheet (PDF)
..1. Size:484K infineon
ipb037n06n3g ipi040n06n3g ipp040n06n3g.pdf 
Type IPB037N06N3 G IPI040N06N3 GIPP040N06N3 GOptiMOS3 Power-TransistorProduct SummaryFeaturesV 60 VDSR 3.7 for sync. rectification, drives and dc/dc SMPS mDS(on),max (SMD)I 90 A Excellent gate charge x R product (FOM) DDS(on)previous engineering Very low on-resistance RDS(on)sample codes: N-channel, normal level IPP04xN06NIPI04xN06N Ava
9.1. Size:508K infineon
ipb038n12n3-g ipi041n12n3-g ipp041n12n3-g.pdf
IPI041N12N3 GIPP041N12N3 G IPB038N12N3 GOptiMOSTM3 Power-TransistorProduct SummaryFeaturesV 120 VDS N-channel, normal levelR 3.8mDS(on),max (TO-263) Excellent gate charge x R product (FOM)DS(on)I 120 AD Very low on-resistance RDS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant, halogen free Qualified according to
9.2. Size:871K infineon
ipb04cn10ng ipi04cn10n ipp04cn10n.pdf
IPB04CN10N G IPI04CN10N GIPP04CN10N G 2 Power-TransistorProduct SummaryFeaturesV 1 D R ( 492??6= ?@C>2= =6G6=R m - @? >2I .) R I46==6?E 82E6 492C86 I R AC@5F4E !) ' D n)I 1 DR /6CJ =@H @? C6D:DE2?46 RD n)R U @A6C2E:?8 E6>A6C2EFC6R *3 7C66 =625 A=2E:?8 , @#- 4@>A=:2?E1)R + F2=:7:65 244@C5:?8 E@ % 7@C E2C86E 2AA=:42E:@?R $562= 7@C 9:89 7C6BF6?4J DH:E4
9.4. Size:874K infineon
ipb04cn10ng ipi04cn10ng ipp04cn10ng ipp04cn10n .pdf
IPB04CN10N G IPI04CN10N GIPP04CN10N G 2 Power-TransistorProduct SummaryFeaturesV 1 D R ( 492??6= ?@C>2= =6G6=R m - @? >2I .) R I46==6?E 82E6 492C86 I R AC@5F4E !) ' D n)I 1 DR /6CJ =@H @? C6D:DE2?46 RD n)R U @A6C2E:?8 E6>A6C2EFC6R *3 7C66 =625 A=2E:?8 , @#- 4@>A=:2?E1)R + F2=:7:65 244@C5:?8 E@ % 7@C E2C86E 2AA=:42E:@?R $562= 7@C 9:89 7C6BF6?4J DH:E4
9.5. Size:873K infineon
ipi041n12n3g ipp041n12n3g ipb038n12n3g.pdf
IPI041N12N3 GIPP041N12N3 G IPB038N12N3 GOptiMOSTM3 Power-TransistorProduct Summary FeaturesVDS 120 V N-channel, normal levelRDS(on),max (TO-263) 3.8 mW Excellent gate charge x R product (FOM)DS(on)ID 120 A Very low on-resistance RDS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant, halogen free Qualified according to JE
9.6. Size:301K infineon
ipi04n03la.pdf
IPI04N03LA, IPP04N03LAOptiMOS2 Power-TransistorProduct SummaryFeaturesV 25 VDS Ideal for high-frequency dc/dc convertersR 4.2mDS(on),max Qualified according to JEDEC1) for target applicationsI 80 AD N-channel - Logic level Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on)PG-TO262-3 PG-TO220-3 Superior therma
9.7. Size:287K inchange semiconductor
ipi041n12n3.pdf
isc N-Channel MOSFET Transistor IPI041N12N3FEATURESStatic drain-source on-resistance:RDS(on) 4.1mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONIdeal for high-frequency switching and synchronous rectificationABSOLUTE MAXIMUM RATINGS(T =25)aSYM
9.8. Size:261K inchange semiconductor
ipi04cn10n.pdf
NCHANGE Semicon Iductorisc N-Channel MOSFET Transistor IPI04CN10NFEATURESStatic drain-source on-resistance:RDS(on) 3.9mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM RATINGS(
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