APT8030JVFR MOSFET. Datasheet pdf. Equivalent
Type Designator: APT8030JVFR
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 450 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id|ⓘ - Maximum Drain Current: 25 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 340 nC
trⓘ - Rise Time: 14 nS
Cossⓘ - Output Capacitance: 645 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.3 Ohm
Package: SOT227
APT8030JVFR Transistor Equivalent Substitute - MOSFET Cross-Reference Search
APT8030JVFR Datasheet (PDF)
apt8030jvfr.pdf
APT8030JVFR800V 25A 0.300FREDFETPOWER MOS VPower MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout."UL Recognized"ISOTOP Fast Recovery Body Diode
apt8030jvr.pdf
APT8030JVR800V 25A 0.300POWER MOS VPower MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout."UL Recognized"ISOTOP Faster Switching 100% Avalanche T
apt8030jn.pdf
DGAPT8030JN 800V 27.0A 0.30SAPT8035JN 800V 25.0A 0.35ISOTOP"UL Recognized" File No. E145592 (S)POWER MOS IVSINGLE DIE ISOTOP PACKAGEN- CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETSMAXIMUM RATINGS All Ratings: TC = 25C unless otherwise specified.APT APTSymbol Parameter 8030JN 8035JN UNITVDSS Drain-Source Voltage800 800 VoltsID Continuous Drain Cu
apt8030lvfr.pdf
APT8030LVFR800V 27A 0.300POWER MOS V FREDFETPower MOS V is a new generation of high voltage N-Channel enhancementTO-264mode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout. Fast Recovery Body Diode 100% Avalanche Tes
apt8030lvr.pdf
APT8030LVR800V 27A 0.300POWER MOS VPower MOS V is a new generation of high voltage N-Channel enhancementTO-264mode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout. Faster Switching 100% Avalanche Tested D Lower
apt8030b2vr.pdf
APT8030B2VR800V 27A 0.300POWER MOS VT-MAXPower MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout. Faster Switching 100% Avalanche Tested D Low
apt8030b2vfr.pdf
APT8030B2VFR800V 27A 0.300POWER MOS V FREDFETT-MAXPower MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout. Fast Recovery Body Diode 100% Avalanche
apt8030.pdf
APT8030B2VFR800V 27A 0.300POWER MOS V FREDFETT-MAXPower MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout. Fast Recovery Body Diode 100% Avalanche
Datasheet: APT8015JVFR , APT8015JVR , APT8018JN , APT8028JVR , APT802R4KN , APT8030B2VFR , APT8030B2VR , APT8030JN , IRF740 , APT8030JVR , APT8030LVFR , APT8030LVR , APT8056BVFR , APT8056BVR , APT8058HVR , APT8065AVR , APT8065BVFR .
History: 2SK1006-01MR
History: 2SK1006-01MR
LIST
Last Update
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918