All MOSFET. APT8030JVFR Datasheet

 

APT8030JVFR Datasheet and Replacement


   Type Designator: APT8030JVFR
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 450 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id|ⓘ - Maximum Drain Current: 25 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 340 nC
   trⓘ - Rise Time: 14 nS
   Cossⓘ - Output Capacitance: 645 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.3 Ohm
   Package: SOT227
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APT8030JVFR Datasheet (PDF)

 ..1. Size:70K  apt
 apt8030jvfr.pdf pdf_icon

APT8030JVFR

APT8030JVFR800V 25A 0.300FREDFETPOWER MOS VPower MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout."UL Recognized"ISOTOP Fast Recovery Body Diode

 5.1. Size:67K  apt
 apt8030jvr.pdf pdf_icon

APT8030JVFR

APT8030JVR800V 25A 0.300POWER MOS VPower MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout."UL Recognized"ISOTOP Faster Switching 100% Avalanche T

 6.1. Size:61K  apt
 apt8030jn.pdf pdf_icon

APT8030JVFR

DGAPT8030JN 800V 27.0A 0.30SAPT8035JN 800V 25.0A 0.35ISOTOP"UL Recognized" File No. E145592 (S)POWER MOS IVSINGLE DIE ISOTOP PACKAGEN- CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETSMAXIMUM RATINGS All Ratings: TC = 25C unless otherwise specified.APT APTSymbol Parameter 8030JN 8035JN UNITVDSS Drain-Source Voltage800 800 VoltsID Continuous Drain Cu

 7.1. Size:62K  apt
 apt8030lvfr.pdf pdf_icon

APT8030JVFR

APT8030LVFR800V 27A 0.300POWER MOS V FREDFETPower MOS V is a new generation of high voltage N-Channel enhancementTO-264mode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout. Fast Recovery Body Diode 100% Avalanche Tes

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Datasheet: APT8015JVFR , APT8015JVR , APT8018JN , APT8028JVR , APT802R4KN , APT8030B2VFR , APT8030B2VR , APT8030JN , IRF740 , APT8030JVR , APT8030LVFR , APT8030LVR , APT8056BVFR , APT8056BVR , APT8058HVR , APT8065AVR , APT8065BVFR .

History: IRF6721S | IRF7703GPBF

Keywords - APT8030JVFR MOSFET datasheet

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