All MOSFET. IPI100N04S4-H2 Datasheet

 

IPI100N04S4-H2 Datasheet and Replacement


   Type Designator: IPI100N04S4-H2
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 115 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 100 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   trⓘ - Rise Time: 13 nS
   Cossⓘ - Output Capacitance: 1250 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0027 Ohm
   Package: TO262
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IPI100N04S4-H2 Datasheet (PDF)

 ..1. Size:159K  infineon
 ipp100n04s4-h2 ipb100n04s4-h2 ipi100n04s4-h2.pdf pdf_icon

IPI100N04S4-H2

IPB100N04S4-H2IPI100N04S4-H2, IPP100N04S4-H2OptiMOS-T2 Power-TransistorProduct SummaryV 40 VDSR (SMD version) 2.4mDS(on),max I 100 ADFeaturesPG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 N-channel - Enhancement mode AEC qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche testedTy

 ..2. Size:135K  infineon
 ipb100n04s4-h2 ipi100n04s4-h2 ipp100n04s4-h2.pdf pdf_icon

IPI100N04S4-H2

IPB100N04S4-H2IPI100N04S4-H2, IPP100N04S4-H2OptiMOS-T2 Power-TransistorProduct SummaryV 40 VDSR (SMD version) 2.4mWDS(on),maxI 100 ADFeaturesPG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 N-channel - Enhancement mode AEC qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche testedType

 4.1. Size:196K  infineon
 ipb100n04s3-03 ipi100n04s3-03 ipp100n04s3-03 ipp100n04s3 ipb100n04s3 ipi100n04s3-03 ds 1 0.pdf pdf_icon

IPI100N04S4-H2

IPB100N04S3-03IPI100N04S3-03, IPP100N04S3-03OptiMOS-T Power-TransistorProduct SummaryV 40 VDSR (SMD Version) 2.5mDS(on) I 100 ADFeatures N-channel - Enhancement modePG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 Automotive AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green package (RoHS compliant) Ultra low Rds(

 6.1. Size:158K  infineon
 ipb100n08s2-07 ipp100n08s2-07 ipi100n08s2-07 ipp100n08s2-07 ipb100n08s2-07 ipi100n08s2-07.pdf pdf_icon

IPI100N04S4-H2

IPB100N08S2-07IPP100N08S2-07, IPI100N08S2-07OptiMOS Power-TransistorProduct SummaryFeaturesV 75 VDS N-channel - Enhancement modeR (SMD version) 6.8mDS(on),max Automotive AEC Q101 qualifiedI 100 AD MSL1 up to 260C peak reflow 175C operating temperaturePG-TO263-3-2 PG-TO220-3-1 PG-TO262-3-1 Green package (lead free) Ultra low Rds(on)

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Keywords - IPI100N04S4-H2 MOSFET datasheet

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