APT8030JVR
MOSFET. Datasheet pdf. Equivalent
Type Designator: APT8030JVR
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 450
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 800
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30
V
|Id|ⓘ - Maximum Drain Current: 25
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 340
nC
trⓘ - Rise Time: 14
nS
Cossⓘ -
Output Capacitance: 645
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.3
Ohm
Package:
SOT227
APT8030JVR
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
APT8030JVR
Datasheet (PDF)
..1. Size:67K apt
apt8030jvr.pdf 
APT8030JVR800V 25A 0.300POWER MOS VPower MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout."UL Recognized"ISOTOP Faster Switching 100% Avalanche T
5.1. Size:70K apt
apt8030jvfr.pdf
APT8030JVFR800V 25A 0.300FREDFETPOWER MOS VPower MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout."UL Recognized"ISOTOP Fast Recovery Body Diode
6.1. Size:61K apt
apt8030jn.pdf
DGAPT8030JN 800V 27.0A 0.30SAPT8035JN 800V 25.0A 0.35ISOTOP"UL Recognized" File No. E145592 (S)POWER MOS IVSINGLE DIE ISOTOP PACKAGEN- CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETSMAXIMUM RATINGS All Ratings: TC = 25C unless otherwise specified.APT APTSymbol Parameter 8030JN 8035JN UNITVDSS Drain-Source Voltage800 800 VoltsID Continuous Drain Cu
7.1. Size:62K apt
apt8030lvfr.pdf
APT8030LVFR800V 27A 0.300POWER MOS V FREDFETPower MOS V is a new generation of high voltage N-Channel enhancementTO-264mode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout. Fast Recovery Body Diode 100% Avalanche Tes
7.2. Size:60K apt
apt8030lvr.pdf
APT8030LVR800V 27A 0.300POWER MOS VPower MOS V is a new generation of high voltage N-Channel enhancementTO-264mode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout. Faster Switching 100% Avalanche Tested D Lower
7.3. Size:58K apt
apt8030b2vr.pdf
APT8030B2VR800V 27A 0.300POWER MOS VT-MAXPower MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout. Faster Switching 100% Avalanche Tested D Low
7.4. Size:60K apt
apt8030b2vfr.pdf
APT8030B2VFR800V 27A 0.300POWER MOS V FREDFETT-MAXPower MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout. Fast Recovery Body Diode 100% Avalanche
7.5. Size:60K apt
apt8030.pdf
APT8030B2VFR800V 27A 0.300POWER MOS V FREDFETT-MAXPower MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout. Fast Recovery Body Diode 100% Avalanche
Datasheet: APT8015JVR
, APT8018JN
, APT8028JVR
, APT802R4KN
, APT8030B2VFR
, APT8030B2VR
, APT8030JN
, APT8030JVFR
, 20N60
, APT8030LVFR
, APT8030LVR
, APT8056BVFR
, APT8056BVR
, APT8058HVR
, APT8065AVR
, APT8065BVFR
, APT8065BVR
.
