APT8030LVFR Specs and Replacement

Type Designator: APT8030LVFR

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 520 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 27 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 14 nS

Cossⓘ - Output Capacitance: 645 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.3 Ohm

Package: TO264

APT8030LVFR substitution

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APT8030LVFR datasheet

 ..1. Size:62K  apt
 apt8030lvfr.pdf pdf_icon

APT8030LVFR

APT8030LVFR 800V 27A 0.300 POWER MOS V FREDFET Power MOS V is a new generation of high voltage N-Channel enhancement TO-264 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. Fast Recovery Body Diode 100% Avalanche Tes... See More ⇒

 5.1. Size:60K  apt
 apt8030lvr.pdf pdf_icon

APT8030LVFR

APT8030LVR 800V 27A 0.300 POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement TO-264 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. Faster Switching 100% Avalanche Tested D Lower ... See More ⇒

 7.1. Size:61K  apt
 apt8030jn.pdf pdf_icon

APT8030LVFR

D G APT8030JN 800V 27.0A 0.30 S APT8035JN 800V 25.0A 0.35 ISOTOP "UL Recognized" File No. E145592 (S) POWER MOS IV SINGLE DIE ISOTOP PACKAGE N- CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS All Ratings TC = 25 C unless otherwise specified. APT APT Symbol Parameter 8030JN 8035JN UNIT VDSS Drain-Source Voltage 800 800 Volts ID Continuous Drain Cu... See More ⇒

 7.2. Size:58K  apt
 apt8030b2vr.pdf pdf_icon

APT8030LVFR

APT8030B2VR 800V 27A 0.300 POWER MOS V T-MAX Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. Faster Switching 100% Avalanche Tested D Low... See More ⇒

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Detailed specifications: APT8018JN, APT8028JVR, APT802R4KN, APT8030B2VFR, APT8030B2VR, APT8030JN, APT8030JVFR, APT8030JVR, 20N60, APT8030LVR, APT8056BVFR, APT8056BVR, APT8058HVR, APT8065AVR, APT8065BVFR, APT8065BVR, APT8065SVR

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