All MOSFET. IPI320N20N3G Datasheet

 

IPI320N20N3G Datasheet and Replacement


   Type Designator: IPI320N20N3G
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 136 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 34 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 9 nS
   Cossⓘ - Output Capacitance: 135 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.032 Ohm
   Package: TO262
 

 IPI320N20N3G substitution

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IPI320N20N3G Datasheet (PDF)

 ..1. Size:419K  infineon
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IPI320N20N3G

IPB320N20N3 G IPP320N20N3 GIPI320N20N3 GOptiMOSTM3 Power-TransistorProduct SummaryFeaturesV 200 VDS N-channel, normal levelR 32mDS(on),max Excellent gate charge x R product (FOM)DS(on)I 34 AD Very low on-resistance RDS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant Qualified according to JEDEC1) for target applica

 ..2. Size:731K  infineon
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IPI320N20N3G

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 3.1. Size:271K  inchange semiconductor
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IPI320N20N3G

isc N-Channel MOSFET Transistor IPI320N20N3FEATURESStatic drain-source on-resistance:RDS(on) 32mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONIdeal for high-frequency switching and synchronous rectificationABSOLUTE MAXIMUM RATINGS(T =25)aSYMB

Datasheet: IPI120N06S4-H1 , IPI126N10N3G , IPI139N08N3G , IPI147N12N3G , IPI180N10N3G , IPI200N15N3G , IPI200N25N3G , IPI26CN10NG , RFP50N06 , IPI35CN10NG , IPI50CN10NG , IPI50R140CP , IPI50R199CP , IPI50R250CP , IPI50R299CP , IPI50R350CP , IPI50R380CE .

History: 4N65K

Keywords - IPI320N20N3G MOSFET datasheet

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