IPI60R280C6 Specs and Replacement
Type Designator: IPI60R280C6
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 104 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 13.8 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 11 nS
Cossⓘ - Output Capacitance: 60 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.28 Ohm
Package: TO262
IPI60R280C6 substitution
- MOSFET ⓘ Cross-Reference Search
IPI60R280C6 datasheet
ipa60r280c6 ipb60r280c6 ipi60r280c6 ipp60r280c6 ipw60r280c6.pdf
MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 600V 600V CoolMOS C6 Power Transistor IPx60R280C6 Data Sheet Rev. 2.2 Final Power Management & Multimarket 600V C IMOS C6 P wer Transist r IPA60R280C6, IPB60R280C6 IPI60R280C6, IPP60R280C6 IPW60R280C6 1 Descripti n CoolMOS is a revolutionary technology for high voltage power MOSFETs designed according... See More ⇒
ipi60r280c6.pdf
isc N-Channel MOSFET Transistor IPI60R280C6 FEATURES Static drain-source on-resistance RDS(on) 0.28 Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Provide all benefits of a fast switching super junction MOS while not sacrificing ease of use ABSOLUTE MA... See More ⇒
ipi60r250cp.pdf
IPI60R250CP C IMOSTM # A0 9 for industrial grade applications 688DF9>CC6CH; Halogen free mold compound ... See More ⇒
Detailed specifications: IPI600N25N3G, IPI60R099CP, IPI60R099CPA, IPI60R125CP, IPI60R165CP, IPI60R190C6, IPI60R199CP, IPI60R250CP, 10N65, IPI60R299CP, IPI60R380C6, IPI60R385CP, IPI60R520CP, IPI60R600CP, IPI65R280C6, IPI65R380C6, IPI65R600C6
Keywords - IPI60R280C6 MOSFET specs
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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
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