All MOSFET. IPI60R280C6 Datasheet

 

IPI60R280C6 MOSFET. Datasheet pdf. Equivalent


   Type Designator: IPI60R280C6
   Marking Code: 6R280C6
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 104 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.5 V
   |Id|ⓘ - Maximum Drain Current: 13.8 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 43 nC
   trⓘ - Rise Time: 11 nS
   Cossⓘ - Output Capacitance: 60 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.28 Ohm
   Package: TO262

 IPI60R280C6 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IPI60R280C6 Datasheet (PDF)

 ..1. Size:1432K  infineon
 ipi60r280c6.pdf

IPI60R280C6 IPI60R280C6

MOSFET+ =L9D - PA

 ..2. Size:1587K  infineon
 ipa60r280c6 ipb60r280c6 ipi60r280c6 ipp60r280c6 ipw60r280c6.pdf

IPI60R280C6 IPI60R280C6

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS C6 600V600V CoolMOS C6 Power TransistorIPx60R280C6Data SheetRev. 2.2FinalPower Management & Multimarket600V CIMOS C6 Pwer Transistr IPA60R280C6, IPB60R280C6IPI60R280C6, IPP60R280C6IPW60R280C61 DescriptinCoolMOS is a revolutionary technology for high voltage powerMOSFETs designed according

 ..3. Size:286K  inchange semiconductor
 ipi60r280c6.pdf

IPI60R280C6 IPI60R280C6

isc N-Channel MOSFET Transistor IPI60R280C6FEATURESStatic drain-source on-resistance:RDS(on) 0.28Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONProvide all benefits of a fast switching super junction MOS while notsacrificing ease of useABSOLUTE MA

 7.1. Size:556K  infineon
 ipi60r250cp.pdf

IPI60R280C6 IPI60R280C6

IPI60R250CPCIMOSTM #:A0:9 for industrial grade applications 688DF9>CC6CH; Halogen free mold compound ::

 7.2. Size:556K  infineon
 ipi60r299cp.pdf

IPI60R280C6 IPI60R280C6

IPI60R299CPCIMOSTM #:A0:9 for industrial grade applications 688DF9>CC6CH; Halogen free mold compoundPGTO262 ::7!"%

 7.3. Size:287K  inchange semiconductor
 ipi60r250cp.pdf

IPI60R280C6 IPI60R280C6

isc N-Channel MOSFET Transistor IPI60R250CPFEATURESStatic drain-source on-resistance:RDS(on) 0.25Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONUltra low gate chargeHigh peak current capabilityABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAME

 7.4. Size:287K  inchange semiconductor
 ipi60r299cp.pdf

IPI60R280C6 IPI60R280C6

isc N-Channel MOSFET Transistor IPI60R299CPFEATURESStatic drain-source on-resistance:RDS(on) 0.299Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONUltra low gate chargeHigh peak current capabilityABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAM

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 20N50 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

 

 
Back to Top