All MOSFET. IPI60R385CP Datasheet

 

IPI60R385CP MOSFET. Datasheet pdf. Equivalent


   Type Designator: IPI60R385CP
   Marking Code: 6R385P
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 83 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.5 V
   |Id|ⓘ - Maximum Drain Current: 9 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 17 nC
   trⓘ - Rise Time: 5 nS
   Cossⓘ - Output Capacitance: 38 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.385 Ohm
   Package: TO262

 IPI60R385CP Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IPI60R385CP Datasheet (PDF)

 ..1. Size:317K  infineon
 ipi60r385cp.pdf

IPI60R385CP IPI60R385CP

IPI60R385CPCoolMOSTM Power TransistorProduct SummaryFeaturesV @ Tj,max 650 VDS Lowest figure-of-merit RON x QgR 0.385DS(on),max Ultra low gate chargeQ 17 nCg,typ Extreme dv/dt rated High peak current capability Qualified according to JEDEC1) for target applicationsPG-TO262 Pb-free lead plating; RoHS compliantCoolMOS CP is specially desig

 ..2. Size:287K  inchange semiconductor
 ipi60r385cp.pdf

IPI60R385CP IPI60R385CP

isc N-Channel MOSFET Transistor IPI60R385CPFEATURESStatic drain-source on-resistance:RDS(on) 0.385Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONUltra low gate chargeHigh peak current capabilityABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAM

 6.1. Size:1201K  infineon
 ipi60r380c6.pdf

IPI60R385CP IPI60R385CP

MOSFET+ =L9D - PA

 6.2. Size:1368K  infineon
 ipd60r380c6 ipi60r380c6 ipb60r380c6 ipp60r380c6 ipa60r380c6.pdf

IPI60R385CP IPI60R385CP

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS C6 600V600V CoolMOS C6 Power TransistorIPx60R380C6Data SheetRev. 2.3FinalPower Management & Multimarket600V CIMOS C6 Pwer Transistr IPD60R380C6, IPI60R380C6IPB60R380C6, IPP60R380C6IPA60R380C61 DescriptinCoolMOS is a revolutionary technology for high voltage powerMOSFETs designed according

 6.3. Size:264K  inchange semiconductor
 ipi60r380c6.pdf

IPI60R385CP IPI60R385CP

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor IPI60R380C6FEATURESWith To-262(I2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALU

Datasheet: FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRF640 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .

 

 
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