All MOSFET. IPI70N04S4-06 Datasheet

 

IPI70N04S4-06 MOSFET. Datasheet pdf. Equivalent


   Type Designator: IPI70N04S4-06
   Marking Code: 4N0406
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 58 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 70 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 24.5 nC
   trⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 490 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0065 Ohm
   Package: TO262

 IPI70N04S4-06 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IPI70N04S4-06 Datasheet (PDF)

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