IPI90R1K0C3
MOSFET. Datasheet pdf. Equivalent
Type Designator: IPI90R1K0C3
Marking Code: 9R1K0C
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 89
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 900
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.5
V
|Id|ⓘ - Maximum Drain Current: 5.7
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 34
nC
trⓘ - Rise Time: 20
nS
Cossⓘ -
Output Capacitance: 42
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 1
Ohm
Package:
TO262
IPI90R1K0C3
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IPI90R1K0C3
Datasheet (PDF)
..1. Size:254K infineon
ipi90r1k0c3.pdf 
IPI90R1K0C3CoolMOS Power TransistorProduct SummaryFeaturesV @ T =25C 900 VDS J Lowest figure-of-merit RON x QgR @ T = 25C 1.0DS(on),max J Extreme dv/dt ratedQ 34 nCg,typ High peak current capability Qualified according to JEDEC1) for target applications Pb-free lead plating; RoHS compliantPG-TO262 Ultra low gate chargeCoolMOS 90
6.1. Size:260K infineon
ipi90r1k2c3.pdf
IPI90R1K2C3CoolMOS Power TransistorProduct SummaryFeaturesV @ T =25C 900 VDS J Lowest figure-of-merit RON x QgR @T =25C 1.2DS(on),max J Extreme dv/dt ratedQ 28 nCg,typ High peak current capability Qualified according to JEDEC1) for target applications Pb-free lead plating; RoHS compliantPG-TO262 Ultra low gate chargeCoolMOS 900V
8.1. Size:259K infineon
ipi90r500c3.pdf
IPI90R500C3CoolMOS Power TransistorProduct SummaryFeaturesV @ T =25C 900 VDS J Lowest figure-of-merit RON x QgR @ T = 25C 0.5DS(on),max J Extreme dv/dt ratedQ 68 nCg,typ High peak current capability Qualified according to JEDEC1) for target applications Pb-free lead plating; RoHS compliantPG-TO262 Ultra low gate chargeCoolMOS 90
8.2. Size:253K infineon
ipi90r340c3.pdf
IPI90R340C3CoolMOS Power TransistorProduct SummaryFeaturesV @ T =25C 900 VDS J Lowest figure-of-merit RON x QgR @T =25C 0.34DS(on),max J Extreme dv/dt ratedQ 94 nCg,typ High peak current capability Qualified according to JEDEC1) for target applications Pb-free lead plating; RoHS compliant Worldwide best R in TO262 (I2Pak)PG-TO262DS
8.3. Size:254K infineon
ipi90r800c3.pdf
IPI90R800C3CoolMOS Power TransistorProduct SummaryFeaturesV @ T =25C 900 VDS J Lowest figure-of-merit RON x QgR @ T = 25C 0.8DS(on),max J Extreme dv/dt ratedQ 42 nCg,typ High peak current capability Qualified according to JEDEC1) for target applications Pb-free lead plating; RoHS compliantPG-TO262 Ultra low gate chargeCoolMOS 90
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