IPL60R299CP Specs and Replacement

Type Designator: IPL60R299CP

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 96 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 11.1 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 5 nS

Cossⓘ - Output Capacitance: 60 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.299 Ohm

Package: THINPAK8X8

IPL60R299CP substitution

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IPL60R299CP datasheet

 ..1. Size:1592K  infineon
ipl60r299cp.pdf pdf_icon

IPL60R299CP

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS CP 600V CoolMOS CP Power Transistor IPL60R299CP Data Sheet Rev. 2.0, 2010-10-01 Final Industrial & Multimarket 600V CoolMOS CP Power Transistor IPL60R299CP 1 Description The CoolMOS CP series offers devices which provide all benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely... See More ⇒

 7.1. Size:1618K  infineon
ipl60r255p6.pdf pdf_icon

IPL60R299CP

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS P6 600V CoolMOS P6 Power Transistor IPL60R255P6 Data Sheet Rev. 2.0 Final Power Management & Multimarket 600V CoolMOS P6 Power Transistor IPL60R255P6 ThinPAK 8x8 1 Description CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and ... See More ⇒

 7.2. Size:1607K  infineon
ipl60r210p6.pdf pdf_icon

IPL60R299CP

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS P6 600V CoolMOS P6 Power Transistor IPL60R210P6 Data Sheet Rev. 2.0 Final Power Management & Multimarket 600V CoolMOS P6 Power Transistor IPL60R210P6 ThinPAK 8x8 1 Description CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and ... See More ⇒

 7.3. Size:1239K  infineon
ipl60r225cfd7.pdf pdf_icon

IPL60R299CP

IPL60R225CFD7 MOSFET ThinPAK 8x8 600V CoolMOS CFD7 Power Transistor CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The latest CoolMOS CFD7 is the successor to the CoolMOS CFD2 series and is an optimized platform tailored to target soft switching applications s... See More ⇒

Detailed specifications: IPI80CN10NG, IPI80N04S4-03, IPI90R1K0C3, IPI90R1K2C3, IPI90R340C3, IPI90R500C3, IPI90R800C3, IPL60R199CP, 7N60, IPL60R385CP, IPP100N04S2-04, IPP100N04S2L-03, IPP100N04S3-03, IPP100N06S2-05, IPP100N06S2L-05, IPP100N08S2-07, IPP100N08S2L-07

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