IPL60R385CP MOSFET. Datasheet pdf. Equivalent
Type Designator: IPL60R385CP
Marking Code: 6R385P
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 83 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.5 V
|Id|ⓘ - Maximum Drain Current: 9 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 17 nC
trⓘ - Rise Time: 5 nS
Cossⓘ - Output Capacitance: 38 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.385 Ohm
Package: THINPAK8X8
IPL60R385CP Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IPL60R385CP Datasheet (PDF)
ipl60r385cp.pdf
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ipl60r210p6.pdf
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