All MOSFET. IPP45N06S4-09 Datasheet

 

IPP45N06S4-09 Datasheet and Replacement


   Type Designator: IPP45N06S4-09
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 71 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 45 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 40 nS
   Cossⓘ - Output Capacitance: 715 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0094 Ohm
   Package: TO220
 

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IPP45N06S4-09 Datasheet (PDF)

 ..1. Size:159K  infineon
ipb45n06s4-09 ipi45n06s4-09 ipp45n06s4-09.pdf pdf_icon

IPP45N06S4-09

IPB45N06S4-09IPI45N06S4-09, IPP45N06S4-09OptiMOS-T2 Power-TransistorProduct SummaryV 60 VDSR (SMD version) 9.2mDS(on),max I 45 ADFeatures N-channel - Enhancement mode AEC qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche testedType Package MarkingIPB45N06S4-09 PG-TO263-

 4.1. Size:170K  infineon
ipb45n06s4l-08 ipi45n06s4l-08 ipp45n06s4l-08 ipp45n06s4l ipb45n06s4l ipi45n06s4l-08.pdf pdf_icon

IPP45N06S4-09

IPB45N06S4L-08IPI45N06S4L-08, IPP45N06S4L-08OptiMOS-T2 Power-TransistorProduct SummaryV 60 VDSR (SMD version) 7.9mDS(on),max I 45 ADFeatures N-channel - Enhancement modePG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche tested

 7.1. Size:159K  infineon
ipp45n04s4l-08 ipb45n04s4l-08 ipi45n04s4l-08.pdf pdf_icon

IPP45N06S4-09

IPB45N04S4L-08IPI45N04S4L-08, IPP45N04S4L-08OptiMOS-T2 Power-TransistorProduct SummaryV 40 VDSR (SMD version) 7.6mDS(on),max I 45 ADFeaturesPG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 N-channel - Enhancement mode AEC qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche testedTyp

 9.1. Size:173K  infineon
ipb45p03p4l-11 ipi45p03p4l-11 ipp45p03p4l-11.pdf pdf_icon

IPP45N06S4-09

IPB45P03P4L-11IPI45P03P4L-11, IPP45P03P4L-11OptiMOS-P2 Power-TransistorProduct SummaryV -30 VDSR (SMD Version) 10.8mDS(on) I -45 ADFeatures P-channel - Logic Level - Enhancement modePG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 AEC qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanch

Datasheet: IPP100N06S2L-05 , IPP100N08S2-07 , IPP100N08S2L-07 , IPP100N10S3-05 , IPP100P03P3L-04 , IPP120N04S3-02 , IPP120N06S4-03 , IPP22N03S4L-15 , AO4468 , IPP45N06S4L-08 , IPP45P03P4L-11 , IPP47N10S-33 , IPP47N10SL-26 , IPP50N10S3L-16 , IPP70N04S3-07 , IPP70N10S3-12 , IPP70N10S3L-12 .

History: IPP120N04S3-02 | SI4N60-TA3-T

Keywords - IPP45N06S4-09 MOSFET datasheet

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