All MOSFET. APT8065SVR Datasheet

 

APT8065SVR MOSFET. Datasheet pdf. Equivalent


   Type Designator: APT8065SVR
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 280 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id|ⓘ - Maximum Drain Current: 13 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 150 nC
   trⓘ - Rise Time: 11 nS
   Cossⓘ - Output Capacitance: 300 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.65 Ohm
   Package: D3PAK

 APT8065SVR Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

APT8065SVR Datasheet (PDF)

 ..1. Size:63K  apt
 apt8065svr.pdf

APT8065SVR APT8065SVR

APT8065SVR800V 13A 0.650POWER MOS VD3PAKPower MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout.D Faster Switching 100% Avalanche Tested Lower

 7.1. Size:60K  apt
 apt8065avr.pdf

APT8065SVR APT8065SVR

APT8065AVR800V 11.5A 0.650POWER MOS VTO-3Power MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout.D Faster Switching 100% Avalanche Tested Lower

 7.2. Size:63K  apt
 apt8065bvfr.pdf

APT8065SVR APT8065SVR

APT8065BVFR800V 13A 0.650POWER MOS V FREDFETPower MOS V is a new generation of high voltage N-Channel enhancement TO-247mode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout. Fast Recovery Body Diode 100% Avalanche Test

 7.3. Size:60K  apt
 apt8065.pdf

APT8065SVR APT8065SVR

APT8065AVR800V 11.5A 0.650POWER MOS VTO-3Power MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout.D Faster Switching 100% Avalanche Tested Lower

 7.4. Size:60K  apt
 apt8065bvr.pdf

APT8065SVR APT8065SVR

APT8065BVR800V 13A 0.650POWER MOS VPower MOS V is a new generation of high voltage N-Channel enhancement TO-247mode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout. Faster Switching 100% Avalanche Tested D Lower L

 7.5. Size:376K  inchange semiconductor
 apt8065bvfr.pdf

APT8065SVR APT8065SVR

isc N-Channel MOSFET Transistor APT8065BVFRFEATURESDrain Current I =13A@ T =25D CDrain Source Voltage-: V =800V(Min)DSSStatic Drain-Source On-Resistance: R =0.65(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurp

 7.6. Size:376K  inchange semiconductor
 apt8065bvr.pdf

APT8065SVR APT8065SVR

isc N-Channel MOSFET Transistor APT8065BVRFEATURESDrain Current I =13A@ T =25D CDrain Source Voltage-: V =800V(Min)DSSStatic Drain-Source On-Resistance: R =0.65(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpo

Datasheet: APT8030LVFR , APT8030LVR , APT8056BVFR , APT8056BVR , APT8058HVR , APT8065AVR , APT8065BVFR , APT8065BVR , P55NF06 , APT8067HVR , APT8075BN , APT8075BVR , BF1100 , BF1100R , BF1100WR , BF1101 , BF1101R .

 

 
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