IPP80N06S2-09 MOSFET Datasheet: N-Ch, 55V, 80A. Full specification with pinout and replacement list

IPP80N06S2-09 Specs and Replacement

   Type Designator: IPP80N06S2-09
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings

   Pd ⓘ - Maximum Power Dissipation: 190 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 55 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 80 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

   tr ⓘ - Rise Time: 29 nS
   Cossⓘ - Output Capacitance: 610 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0091 Ohm
   Package: TO220

IPP80N06S2-09 substitution

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IPP80N06S2-09 datasheet

..1. Size:155K infineon
ipb80n06s2-09 ipp80n06s2-09 ipp80n06s2-09 ipb80n06s2-09.pdf pdf_icon

IPB80N06S2-09 IPP80N06S2-09 OptiMOS Power-Transistor Product Summary Features V 55 V DS N-channel - Enhancement mode R (SMD version) 8.8 m DS(on),max Automotive AEC Q101 qualified I 80 A D MSL1 up to 260 C peak reflow 175 C operating temperature PG-TO263-3-2 PG-TO220-3-1 Green package (lead free) Ultra low Rds(on) 100% Avalanche tested Type... See More ⇒

..2. Size:281K inchange semiconductor
ipp80n06s2-09.pdf pdf_icon

isc N-Channel MOSFET Transistor IPP80N06S2-09 FEATURES Drain Current I = 100A@ T =25 D C Drain Source Voltage- V = 55V(Min) DSS Static Drain-Source On-Resistance R 9.1m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Ultra Low On-resistance Fast Switching Type Marking ... See More ⇒

2.1. Size:155K infineon
ipp80n06s2-05 ipb80n06s2-05.pdf pdf_icon

IPB80N06S2-05 IPP80N06S2-05 OptiMOS Power-Transistor Product Summary Features V 55 V DS N-channel - Enhancement mode R (SMD version) 4.8 m DS(on),max Automotive AEC Q101 qualified I 80 A D MSL1 up to 260 C peak reflow 175 C operating temperature PG-TO263-3-2 PG-TO220-3-1 Green package (lead free) Ultra low Rds(on) 100% Avalanche tested Type... See More ⇒

2.2. Size:158K infineon
ipb80n06s2-08 ipp80n06s2-08 ipi80n06s2-08 ipp80n06s2-08 ipb80n06s2-08 ipi80n06s2-08.pdf pdf_icon

IPB80N06S2-08 IPP80N06S2-08, IPI80N06S2-08 OptiMOS Power-Transistor Product Summary Features V 55 V DS N-channel - Enhancement mode R (SMD version) 7.7 m DS(on),max Automotive AEC Q101 qualified I 80 A D MSL1 up to 260 C peak reflow 175 C operating temperature PG-TO263-3-2 PG-TO220-3-1 PG-TO262-3-1 Green package (lead free) Ultra low Rds(on) ... See More ⇒