All MOSFET. IPP80N06S2-09 Datasheet

 

IPP80N06S2-09 MOSFET. Datasheet pdf. Equivalent

Type Designator: IPP80N06S2-09

Marking Code: 2N0609

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 190 W

Maximum Drain-Source Voltage |Vds|: 55 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 80 A

Maximum Junction Temperature (Tj): 175 °C

Total Gate Charge (Qg): 60 nC

Rise Time (tr): 29 nS

Drain-Source Capacitance (Cd): 610 pF

Maximum Drain-Source On-State Resistance (Rds): 0.0091 Ohm

Package: TO220

IPP80N06S2-09 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IPP80N06S2-09 Datasheet (PDF)

0.1. ipp80n06s2-09 ipb80n06s2-09.pdf Size:155K _infineon

IPP80N06S2-09
IPP80N06S2-09

IPB80N06S2-09IPP80N06S2-09OptiMOS Power-TransistorProduct SummaryFeaturesV 55 VDS N-channel - Enhancement modeR (SMD version) 8.8mDS(on),max Automotive AEC Q101 qualifiedI 80 AD MSL1 up to 260C peak reflow 175C operating temperaturePG-TO263-3-2 PG-TO220-3-1 Green package (lead free) Ultra low Rds(on) 100% Avalanche testedType

2.1. ipp80n06s2-08 ipb80n06s2-08 ipi80n06s2-08.pdf Size:158K _infineon

IPP80N06S2-09
IPP80N06S2-09

IPB80N06S2-08IPP80N06S2-08, IPI80N06S2-08OptiMOS Power-TransistorProduct SummaryFeaturesV 55 VDS N-channel - Enhancement modeR (SMD version) 7.7mDS(on),max Automotive AEC Q101 qualifiedI 80 AD MSL1 up to 260C peak reflow 175C operating temperaturePG-TO263-3-2 PG-TO220-3-1 PG-TO262-3-1 Green package (lead free) Ultra low Rds(on)

2.2. ipp80n06s2-07 ipb80n06s2-07 ipi80n06s2-07.pdf Size:158K _infineon

IPP80N06S2-09
IPP80N06S2-09

IPB80N06S2-07IPP80N06S2-07, IPI80N06S2-07OptiMOS Power-TransistorProduct SummaryFeaturesV 55 VDS N-channel - Enhancement modeR (SMD version) 6.3mDS(on),max Automotive AEC Q101 qualifiedI 80 AD MSL1 up to 260C peak reflow 175C operating temperaturePG-TO263-3-2 PG-TO220-3-1 PG-TO262-3-1 Green package (lead free) Ultra low Rds(on)

 2.3. ipp80n06s2-05 ipb80n06s2-05.pdf Size:155K _infineon

IPP80N06S2-09
IPP80N06S2-09

IPB80N06S2-05IPP80N06S2-05OptiMOS Power-TransistorProduct SummaryFeaturesV 55 VDS N-channel - Enhancement modeR (SMD version) 4.8mDS(on),max Automotive AEC Q101 qualifiedI 80 AD MSL1 up to 260C peak reflow 175C operating temperaturePG-TO263-3-2 PG-TO220-3-1 Green package (lead free) Ultra low Rds(on) 100% Avalanche testedType

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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