All MOSFET. IPP80N06S4L-07 Datasheet

 

IPP80N06S4L-07 Datasheet and Replacement


   Type Designator: IPP80N06S4L-07
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 79 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 16 V
   |Id|ⓘ - Maximum Drain Current: 80 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   trⓘ - Rise Time: 3 nS
   Cossⓘ - Output Capacitance: 980 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0067 Ohm
   Package: TO220
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IPP80N06S4L-07 Datasheet (PDF)

 ..1. Size:170K  infineon
 ipb80n06s4l-07 ipi80n06s4l-07 ipp80n06s4l-07 ipp80n06s4l ipb80n06s4l ipi80n06s4l-07.pdf pdf_icon

IPP80N06S4L-07

IPB80N06S4L-07IPI80N06S4L-07, IPP80N06S4L-07OptiMOS-T2 Power-TransistorProduct SummaryV 60 VDSR (SMD version) 6.4mDS(on),max I 80 ADFeatures N-channel - Enhancement modePG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche tested

 1.1. Size:174K  infineon
 ipi80n06s4l-05 ipp80n06s4l-05 ipb80n06s4l-05.pdf pdf_icon

IPP80N06S4L-07

IPB80N06S4L-05IPI80N06S4L-05, IPP80N06S4L-05OptiMOS-T2 Power-TransistorProduct SummaryV 60 VDSR (SMD version) 4.8mDS(on),max I 80 ADFeatures N-channel - Enhancement modePG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche tested

 1.2. Size:170K  infineon
 ipb80n06s4l-05 ipi80n06s4l-05 ipp80n06s4l-05.pdf pdf_icon

IPP80N06S4L-07

IPB80N06S4L-05IPI80N06S4L-05, IPP80N06S4L-05OptiMOS-T2 Power-TransistorProduct SummaryV 60 VDSR (SMD version) 4.8mDS(on),max I 80 ADFeatures N-channel - Enhancement modePG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche tested

 4.1. Size:175K  infineon
 ipi80n06s4-07 ipp80n06s4-07 ipb80n06s4-07.pdf pdf_icon

IPP80N06S4L-07

IPB80N06S4-07IPI80N06S4-07, IPP80N06S4-07OptiMOS-T2 Power-TransistorProduct SummaryV 60 VDSR (SMD version) 7.1mDS(on),max I 80 ADFeatures N-channel - Enhancement modePG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche testedT

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History: VBNC1303 | IRFS4010PBF

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