All MOSFET. IPP80P03P4L-04 Datasheet

 

IPP80P03P4L-04 Datasheet and Replacement


   Type Designator: IPP80P03P4L-04
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 137 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 16 V
   |Id| ⓘ - Maximum Drain Current: 80 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 11 nS
   Cossⓘ - Output Capacitance: 2350 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0044 Ohm
   Package: TO220
 

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IPP80P03P4L-04 Datasheet (PDF)

 ..1. Size:173K  infineon
 ipi80p03p4l-04 ipp80p03p4l-04 ipb80p03p4l-04.pdf pdf_icon

IPP80P03P4L-04

IPB80P03P4L-04IPI80P03P4L-04, IPP80P03P4L-04OptiMOS-P2 Power-TransistorProduct SummaryV -30 VDSR (SMD Version) 4.1mDS(on) I -80 ADFeatures P-channel - Logic Level - Enhancement modePG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 AEC qualified MSL1 up to 260C peak reflow 175C operating temperature Green package (RoHS compliant) 100% Avalanche

 1.1. Size:168K  infineon
 ipb80p03p4l-07 ipi80p03p4l-07 ipp80p03p4l-07 ipp80p03p4l-07 ipb80p03p4l-07 ipi80p03p4l-07.pdf pdf_icon

IPP80P03P4L-04

IPB80P03P4L-07IPI80P03P4L-07, IPP80P03P4L-07OptiMOS-P2 Power-TransistorProduct SummaryV -30 VDSR (SMD Version) 6.9mDS(on) I -80 ADFeatures P-channel - Logic Level - Enhancement modePG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 AEC qualified MSL1 up to 260C peak reflow 175C operating temperature Green package (RoHS compliant) 100% Avalanche

 4.1. Size:169K  infineon
 ipb80p03p4-05 ipi80p03p4-05 ipp80p03p4-05 ipp80p03p4-05 ipb80p03p4-05 ipi80p03p4-05.pdf pdf_icon

IPP80P03P4L-04

IPB80P03P4-05IPI80P03P4-05, IPP80P03P4-05OptiMOS-P2 Power-TransistorProduct SummaryV -30 VDSR (SMD Version) 4.7mDS(on) I -80 ADFeatures P-channel - Normal Level - Enhancement modePG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 AEC qualified MSL1 up to 260C peak reflow 175C operating temperature Green package (RoHS compliant) 100% Avalanche t

 7.1. Size:290K  infineon
 ipb80p04p4l-08 ipi80p04p4l-08 ipp80p04p4l-08.pdf pdf_icon

IPP80P03P4L-04

IPB80P04P4L-08IPI80P04P4L-08, IPP80P04P4L-08OptiMOS-P2 Power-TransistorProduct SummaryVDS -40 VRDS(on) (SMD Version) 7.9mWID -80 AFeatures P-channel - Logic Level - Enhancement mode AEC qualifiedPG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 MSL1 up to 260C peak reflow 175C operating temperature Green package (RoHS compliant) 100% Avalanche tested

SHOW MORE

Datasheet: IPP80N06S2L-11 , IPP80N06S2L-H5 , IPP80N06S4-05 , IPP80N06S4-07 , IPP80N06S4L-05 , IPP80N06S4L-07 , IPP80N08S2-07 , IPP80N08S2L-07 , 5N60 , IPP80P03P4L-07 , IPP90N04S4-02 , IPP90N06S4-04 , IPP90N06S4L-04 , IPP015N04NG , IPP023N04NG , IPP023NE7N3G , IPP024N06N3G .

History: IRFH5010 | SSR1N60B | STD12N60DM2AG | MTE05N10FP | WML12N100C2 | IPI04N03LA | NP75N04YUK

Keywords - IPP80P03P4L-04 MOSFET datasheet

 IPP80P03P4L-04 cross reference
 IPP80P03P4L-04 equivalent finder
 IPP80P03P4L-04 lookup
 IPP80P03P4L-04 substitution
 IPP80P03P4L-04 replacement

 

 
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