IPP90N06S4-04 PDF Specs and Replacement
Type Designator: IPP90N06S4-04
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Absolute Maximum Ratings
Pd ⓘ
- Maximum Power Dissipation: 150
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Id| ⓘ - Maximum Drain Current: 90
A
Tj ⓘ - Maximum Junction Temperature: 175
°C
Electrical Characteristics
tr ⓘ - Rise Time: 70
nS
Cossⓘ -
Output Capacitance: 1960
pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.004
Ohm
Package:
TO220
IPP90N06S4-04 substitution
-
MOSFET ⓘ Cross-Reference Search
IPP90N06S4-04 PDF Specs
..1. Size:167K infineon
ipi90n06s4-04 ipp90n06s4-04 ipb90n06s4-04.pdf 
IPB90N06S4-04 IPI90N06S4-04, IPP90N06S4-04 OptiMOS -T2 Power-Transistor Product Summary V 60 V DS R (SMD version) 3.7 m DS(on),max I 90 A D Features PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 N-channel - Enhancement mode AEC qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green Product (RoHS compliant) 100% Avalanche tested Type P... See More ⇒
..2. Size:170K infineon
ipb90n06s4-04 ipi90n06s4-04 ipp90n06s4-04.pdf 
IPB90N06S4-04 IPI90N06S4-04, IPP90N06S4-04 OptiMOS -T2 Power-Transistor Product Summary V 60 V DS R (SMD version) 3.7 m DS(on),max I 90 A D Features PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 N-channel - Enhancement mode AEC qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green Product (RoHS compliant) 100% Avalanche tested Type P... See More ⇒
7.1. Size:163K infineon
ipi90n04s4-02 ipp90n04s4-02 ipb90n04s4-02.pdf 
IPB90N04S4-02 IPI90N04S4-02, IPP90N04S4-02 OptiMOS -T2 Power-Transistor Product Summary V 40 V DS R (SMD version) 2.1 m DS(on),max I 90 A D Features PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 N-channel - Enhancement mode AEC qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green Product (RoHS compliant) 100% Avalanche tested Type P... See More ⇒
9.1. Size:293K infineon
ipp90r1k2c3.pdf 
IPP90R1K2C3 CoolMOS Power Transistor Product Summary Features V @ T =25 C 900 V DS J Lowest figure-of-merit RON x Qg R @T =25 C 1.2 DS(on),max J Extreme dv/dt rated Q 28 nC g,typ High peak current capability Qualified according to JEDEC1) for target applications PG-TO220 Pb-free lead plating; RoHS compliant Ultra low gate charge CoolMOS 900V... See More ⇒
9.2. Size:292K infineon
ipp90r500c3.pdf 
IPP90R500C3 CoolMOS Power Transistor Product Summary Features V @ T =25 C 900 V DS J Lowest figure-of-merit RON x Qg R @ T = 25 C 0.5 DS(on),max J Extreme dv/dt rated Q 68 nC g,typ High peak current capability Qualified according to JEDEC1) for target applications PG-TO220 Pb-free lead plating; RoHS compliant Ultra low gate charge CoolMOS 90... See More ⇒
9.3. Size:286K infineon
ipp90r340c3.pdf 
IPP90R340C3 CoolMOS Power Transistor Product Summary Features V @ T =25 C 900 V DS J Lowest figure-of-merit RON x Qg R @T =25 C 0.34 DS(on),max J Extreme dv/dt rated Q 94 nC g,typ High peak current capability Qualified according to JEDEC1) for target applications Pb-free lead plating; RoHS compliant PG-TO220 Worldwide best R in TO220 DS,on ... See More ⇒
9.4. Size:286K infineon
ipp90r800c3.pdf 
IPP90R800C3 CoolMOS Power Transistor Product Summary Features V @ T =25 C 900 V DS J Lowest figure-of-merit RON x Qg R @ T = 25 C 0.8 DS(on),max J Extreme dv/dt rated Q 42 nC g,typ High peak current capability Qualified according to JEDEC1) for target applications Pb-free lead plating; RoHS compliant PG-TO220 Ultra low gate charge CoolMOS 90... See More ⇒
9.5. Size:287K infineon
ipp90r1k0c3.pdf 
IPP90R1K0C3 CoolMOS Power Transistor Product Summary Features V @ T =25 C 900 V DS J Lowest figure-of-merit RON x Qg R @ T = 25 C 1.0 DS(on),max J Extreme dv/dt rated Q 34 nC g,typ High peak current capability Qualified according to JEDEC1) for target applications PG-TO220 Pb-free lead plating; RoHS compliant Ultra low gate charge CoolMOS 90... See More ⇒
9.6. Size:246K inchange semiconductor
ipp90r500c3.pdf 
isc N-Channel MOSFET Transistor IPP90R500C3 IIPP90R500C3 FEATURES Static drain-source on-resistance RDS(on) 0.5 Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION High peak current capability Ultra low gate charge ABSOLUTE MAXIMUM RATINGS(T =25 ) a ... See More ⇒
9.7. Size:245K inchange semiconductor
ipp90r340c3.pdf 
isc N-Channel MOSFET Transistor IPP90R340C3 IIPP90R340C3 FEATURES Static drain-source on-resistance RDS(on) 0.34 Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION High peak current capability Ultra low gate charge ABSOLUTE MAXIMUM RATINGS(T =25 ) a... See More ⇒
9.8. Size:260K inchange semiconductor
ipp90r800c3.pdf 
isc N-Channel MOSFET Transistor IPP90R800C3 FEATURES With TO-220 packaging High speed switching Low gate input resistance Standard level gate drive Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL ... See More ⇒
Detailed specifications: IPP80N06S4-07
, IPP80N06S4L-05
, IPP80N06S4L-07
, IPP80N08S2-07
, IPP80N08S2L-07
, IPP80P03P4L-04
, IPP80P03P4L-07
, IPP90N04S4-02
, IRFP260
, IPP90N06S4L-04
, IPP015N04NG
, IPP023N04NG
, IPP023NE7N3G
, IPP024N06N3G
, IPP028N08N3G
, IPP030N10N3G
, IPP032N06N3G
.
Keywords - IPP90N06S4-04 MOSFET specs
IPP90N06S4-04 cross reference
IPP90N06S4-04 equivalent finder
IPP90N06S4-04 pdf lookup
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IPP90N06S4-04 replacement
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