IPP032N06N3G Specs and Replacement

Type Designator: IPP032N06N3G

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 188 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 120 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 120 nS

Cossⓘ - Output Capacitance: 2200 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0032 Ohm

Package: TO220

IPP032N06N3G substitution

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IPP032N06N3G datasheet

 ..1. Size:483K  infineon
ipb029n06n3g ipi032n06n3g ipp032n06n3g.pdf pdf_icon

IPP032N06N3G

Type IPB029N06N3 G IPI032N06N3 G IPP032N06N3 G OptiMOS 3 Power-Transistor Product Summary V 60 V Features DS R 2.9 m Ideal for high frequency switching and sync. rec. DS(on),max (SMD) I 120 A Optimized technology for DC/DC converters D Excellent gate charge x R product (FOM) DS(on) Very low on-resistance RDS(on) N-channel, normal level 100% avalanche t... See More ⇒

 ..2. Size:2470K  cn vbsemi
ipp032n06n3g.pdf pdf_icon

IPP032N06N3G

IPP032N06N3G www.VBsemi.tw N-Channel 60 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) 60 Definition RDS(on) ( ) at VGS = 10 V 0.0035 TrenchFET Power MOSFET RDS(on) ( ) at VGS = 4.5 V 0.0090 Package with Low Thermal Resistance ID (A) 210 100 % Rg and UIS Tested Configuration Single Compliant to RoHS Directive 200... See More ⇒

 3.1. Size:246K  inchange semiconductor
ipp032n06n3.pdf pdf_icon

IPP032N06N3G

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IPP032N06N3 IIPP032N06N3 FEATURES Static drain-source on-resistance RDS(on) 2.9m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION reliable device for use in a wide variety of applications ABSOLUTE M... See More ⇒

 9.1. Size:460K  1
ipi034ne7n3g ipp034ne7n3g.pdf pdf_icon

IPP032N06N3G

IPP034NE7N3 G IPI034NE7N3 G OptiMOSTM3 Power-Transistor Product Summary Features V 75 V DS Optimized technology for synchronous rectification R 3.4 m DS(on),max Ideal for high frequency switching and DC/DC converters I 100 A D Excellent gate charge x R product (FOM) DS(on) Very low on-resistance RDS(on) N-channel, normal level 100% avalanche tested ... See More ⇒

Detailed specifications: IPP90N06S4-04, IPP90N06S4L-04, IPP015N04NG, IPP023N04NG, IPP023NE7N3G, IPP024N06N3G, IPP028N08N3G, IPP030N10N3G, 5N65, IPP034N03LG, IPP034NE7N3G, IPP037N06L3G, IPP037N08N3G, IPP039N04LG, IPP040N06N3G, IPP041N04NG, IPP041N12N3G

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