All MOSFET. IPP06CN10LG Datasheet

 

IPP06CN10LG MOSFET. Datasheet pdf. Equivalent


   Type Designator: IPP06CN10LG
   Marking Code: 06CN10L
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 214 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.4 V
   |Id|ⓘ - Maximum Drain Current: 100 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 124 nC
   trⓘ - Rise Time: 27 nS
   Cossⓘ - Output Capacitance: 1130 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0062 Ohm
   Package: TO220

 IPP06CN10LG Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IPP06CN10LG Datasheet (PDF)

 4.1. Size:545K  infineon
 ipp06cn10l1.pdf

IPP06CN10LG IPP06CN10LG

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 5.1. Size:519K  infineon
 ipb06cn10n-g ipi06cn10n-g ipp06cn10n-g.pdf

IPP06CN10LG IPP06CN10LG

IPB06CN10N G IPI06CN10N GIPP06CN10N GOptiMOS2 Power-TransistorProduct SummaryFeaturesV 100 VDS N-channel, normal levelR 6.2mDS(on),max (TO263) Excellent gate charge x R product (FOM)DS(on)I 100 AD Very low on-resistance RDS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant Qualified according to JEDEC1) for target

 5.2. Size:770K  infineon
 ipp06cn10n.pdf

IPP06CN10LG IPP06CN10LG

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Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , STP80NF70 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: P0603BD | BUK9618-30 | AM7335P | BUK9606-55B | FDFC2P100 | IXTK160N20

 

 
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