IPP06CN10LG MOSFET. Datasheet pdf. Equivalent
Type Designator: IPP06CN10LG
Marking Code: 06CN10L
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 214 W
Maximum Drain-Source Voltage |Vds|: 100 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 2.4 V
Maximum Drain Current |Id|: 100 A
Maximum Junction Temperature (Tj): 175 °C
Total Gate Charge (Qg): 124 nC
Rise Time (tr): 27 nS
Drain-Source Capacitance (Cd): 1130 pF
Maximum Drain-Source On-State Resistance (Rds): 0.0062 Ohm
Package: TO220
IPP06CN10LG Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IPP06CN10LG Datasheet (PDF)
ipp06cn10l1.pdf
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ipb06cn10n-g ipi06cn10n-g ipp06cn10n-g.pdf
IPB06CN10N G IPI06CN10N GIPP06CN10N GOptiMOS2 Power-TransistorProduct SummaryFeaturesV 100 VDS N-channel, normal levelR 6.2mDS(on),max (TO263) Excellent gate charge x R product (FOM)DS(on)I 100 AD Very low on-resistance RDS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant Qualified according to JEDEC1) for target
ipp06cn10n.pdf
IPB06CN10N G IPI06CN10N GIPP06CN10N G 2 Power-TransistorProduct SummaryFeaturesV 100 VDSR ( 492??6= ?@C>2= =6G6=R 6.2 m - @? >2I .) R I46==6?E 82E6 492C86 I R AC@5F4E !) ' DS(on)I 100 ADR /6CJ =@H @? C6D:DE2?46 RDS(on)R U @A6C2E:?8 E6>A6C2EFC6R *3 7C66 =625 A=2E:?8 , @#- 4@>A=:2?E1)R + F2=:7:65 244@C5:?8 E@ % 7@C E2C86E 2AA=:42E:@?R $562= 7@C 9:89 7
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , 13N50 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
History: IPP05CN10N
History: IPP05CN10N
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