All MOSFET. IPP08CN10LG Datasheet

 

IPP08CN10LG MOSFET. Datasheet pdf. Equivalent


   Type Designator: IPP08CN10LG
   Marking Code: 08CN10L
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 167 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.4 V
   |Id|ⓘ - Maximum Drain Current: 98 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 90 nC
   trⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 818 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.008 Ohm
   Package: TO220

 IPP08CN10LG Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IPP08CN10LG Datasheet (PDF)

 4.1. Size:515K  infineon
 ipp08cn10l1.pdf

IPP08CN10LG IPP08CN10LG

IPP08CN10L G 2 Power-TransistorProduct SummaryFeaturesV 100 VDS N-channel, logic levelR 8mDS(on),max Excellent gate charge x R product (FOM)DS(on)I 98 AD Very low on-resistance RDS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant Qualified according to JEDEC1) for target application Ideal for high-frequency

 5.1. Size:527K  infineon
 ipb08cn10ng ipi08cn10ng ipp08cn10ng.pdf

IPP08CN10LG IPP08CN10LG

IPB08CN10N GIPI08CN10N G IPP08CN10N GOptiMOS2 Power-TransistorProduct SummaryFeaturesV 100 VDS N-channel, normal levelR 8.2mDS(on),max (TO263) Excellent gate charge x R product (FOM)DS(on)I 95 AD Very low on-resistance RDS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant Qualified according to JEDEC1) for target

 5.2. Size:750K  infineon
 ipp08cn10n8.pdf

IPP08CN10LG IPP08CN10LG

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Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: STD30NF06L-1

 

 
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