IPP08CN10NG Specs and Replacement
Type Designator: IPP08CN10NG
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 167 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 95 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 24 nS
Cossⓘ - Output Capacitance: 757 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0085 Ohm
Package: TO220
IPP08CN10NG substitution
- MOSFET ⓘ Cross-Reference Search
IPP08CN10NG datasheet
ipb08cn10ng ipi08cn10ng ipp08cn10ng.pdf
IPB08CN10N G IPI08CN10N G IPP08CN10N G OptiMOS 2 Power-Transistor Product Summary Features V 100 V DS N-channel, normal level R 8.2 m DS(on),max (TO263) Excellent gate charge x R product (FOM) DS(on) I 95 A D Very low on-resistance R DS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant Qualified according to JEDEC1) for target ... See More ⇒
ipp08cn10n8.pdf
$ " " $ " " $$ " " $;B1= '=- >5>?;= $=;0@/? &@99-=D Features 100 V DS R ( 492??6= ?@C>2= =6G6= 8.2 m - @? >2I .) R I46==6?E 82E6 492C86 I AC@5F4E !) ' DS(on) 95 A D R /6CJ =@H @? C6D DE2?46 DS(on) R U @A6C2E ?8 E6>A6C2EFC6 R *3 7C66 =625 A=2E ?8 , @#- 4@>A= 2?E 1) R + F2= 7 65 244@C5 ?8 E@ % 7@C E2C86E 2AA= 42E @? R $562= 7@C 9 89 7C6BF6?4J DH E49 ?8 2?5 DJ?49C@... See More ⇒
ipp08cn10l1.pdf
IPP08CN10L G 2 Power-Transistor Product Summary Features V 100 V DS N-channel, logic level R 8 m DS(on),max Excellent gate charge x R product (FOM) DS(on) I 98 A D Very low on-resistance R DS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant Qualified according to JEDEC1) for target application Ideal for high-frequency... See More ⇒
ipi08cne8n-g ipp08cne8n-g ipb08cne8n-g ipp08cne8n7.pdf
IPB08CNE8N G IPI08CNE8N G IPP08CNE8N G 2 Power-Transistor Product Summary Features V D R ( 492??6= ?@C>2= =6G6= R m - @? >2I .) R I46==6?E 82E6 492C86 I R AC@5F4E !) ' D n) I D R /6CJ =@H @? C6D DE2?46 R D n) R U @A6C2E ?8 E6>A6C2EFC6 R *3 7C66 =625 A=2E ?8 , @#- 4@>A= 2?E 1) R + F2= 7 65 244@C5 ?8 E@ % 7@C E2C86E 2AA= 42E @? R $562= 7@C 9 89 7C6BF6?4J DH E49 ?8... See More ⇒
Detailed specifications: IPP075N15N3G, IPP076N12N3G, IPP080N03LG, IPP080N06NG, IPP084N06L3G, IPP085N06LG, IPP086N10N3G, IPP08CN10LG, IRLB3034, IPP093N06N3G, IPP096N03LG, IPP100N04S4-H2, IPP100N08N3G, IPP110N06LG, IPP110N20N3G, IPP111N15N3G, IPP114N03LG
Keywords - IPP08CN10NG MOSFET specs
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