IPP08CN10NG Datasheet and Replacement. Cross Reference Search

IPP08CN10NG Datasheet (PDF)

..1. Size:527K infineon
ipb08cn10ng ipi08cn10ng ipp08cn10ng.pdf pdf_icon

IPB08CN10N GIPI08CN10N G IPP08CN10N GOptiMOS2 Power-TransistorProduct SummaryFeaturesV 100 VDS N-channel, normal levelR 8.2mDS(on),max (TO263) Excellent gate charge x R product (FOM)DS(on)I 95 AD Very low on-resistance RDS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant Qualified according to JEDEC1) for target

4.1. Size:750K infineon
ipp08cn10n8.pdf pdf_icon

$ " " $ " " $$ " " $;B1= '=-:>5>?;=$=;0@/? &@99-=DFeatures 100 VDSR ( 492??6= ?@C>2= =6G6= 8.2 m - @? >2I .) R I46==6?E 82E6 492C86 I AC@5F4E !) ' DS(on) 95 ADR /6CJ =@H @? C6D:DE2?46 DS(on)R U @A6C2E:?8 E6>A6C2EFC6R *3 7C66 =625 A=2E:?8 , @#- 4@>A=:2?E1)R + F2=:7:65 244@C5:?8 E@ % 7@C E2C86E 2AA=:42E:@?R $562= 7@C 9:89 7C6BF6?4J DH:E49:?8 2?5 DJ?49C@

5.1. Size:515K infineon
ipp08cn10l1.pdf pdf_icon

IPP08CN10L G 2 Power-TransistorProduct SummaryFeaturesV 100 VDS N-channel, logic levelR 8mDS(on),max Excellent gate charge x R product (FOM)DS(on)I 98 AD Very low on-resistance RDS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant Qualified according to JEDEC1) for target application Ideal for high-frequency

7.1. Size:772K infineon
ipi08cne8n-g ipp08cne8n-g ipb08cne8n-g ipp08cne8n7.pdf pdf_icon

IPB08CNE8N GIPI08CNE8N G IPP08CNE8N G 2 Power-TransistorProduct SummaryFeaturesV D R ( 492??6= ?@C>2= =6G6=R m - @? >2I .) R I46==6?E 82E6 492C86 I R AC@5F4E !) ' D n)I DR /6CJ =@H @? C6D:DE2?46 RD n)R U @A6C2E:?8 E6>A6C2EFC6R *3 7C66 =625 A=2E:?8 , @#- 4@>A=:2?E1)R + F2=:7:65 244@C5:?8 E@ % 7@C E2C86E 2AA=:42E:@?R $562= 7@C 9:89 7C6BF6?4J DH:E49:?8

Datasheet: IPP075N15N3G , IPP076N12N3G , IPP080N03LG , IPP080N06NG , IPP084N06L3G , IPP085N06LG , IPP086N10N3G , IPP08CN10LG , 60N06 , IPP093N06N3G , IPP096N03LG , IPP100N04S4-H2 , IPP100N08N3G , IPP110N06LG , IPP110N20N3G , IPP111N15N3G , IPP114N03LG .