IPP110N20N3G Specs and Replacement

Type Designator: IPP110N20N3G

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 300 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 88 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 26 nS

Cossⓘ - Output Capacitance: 401 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.011 Ohm

Package: TO220

IPP110N20N3G substitution

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IPP110N20N3G datasheet

 ..1. Size:690K  infineon
 ipb107n20n3-g ipp110n20n3-g ipi110n20n3-g ipb107n20n3g ipp110n20n3g ipi110n20n3g.pdf pdf_icon

IPP110N20N3G

IPB107N20N3 G IPP110N20N3 G IPI110N20N3 G OptiMOSTM3 Power-Transistor Product Summary Features VDS 200 V N-channel, normal level RDS(on),max (TO263) 10.7 mW Excellent gate charge x R product (FOM) DS(on) ID 88 A Very low on-resistance R DS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant Qualified according to JEDEC1) for target appl... See More ⇒

 3.1. Size:245K  inchange semiconductor
 ipp110n20n3.pdf pdf_icon

IPP110N20N3G

isc N-Channel MOSFET Transistor IPP110N20N3 IIPP110N20N3 FEATURES Static drain-source on-resistance RDS(on) 11m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Ideal for high-frequency switching and synchronous rectification ABSOLUTE MAXIMUM RATINGS(T =... See More ⇒

 4.1. Size:652K  infineon
 ipb107n20na ipp110n20na.pdf pdf_icon

IPP110N20N3G

IPB107N20NA IPP110N20NA OptiMOSTM3 Power-Transistor Product Summary Features VDS 200 V N-channel, normal level RDS(on),max (TO263) 10.7 mW Excellent gate charge x R product (FOM) DS(on) ID 88 A Very low on-resistance R DS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant Qualified according to AEC Q101 Halogen-free according to IE... See More ⇒

 4.2. Size:245K  inchange semiconductor
 ipp110n20na.pdf pdf_icon

IPP110N20N3G

isc N-Channel MOSFET Transistor IPP110N20NA IIPP110N20NA FEATURES Static drain-source on-resistance RDS(on) 11m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Ideal for high-frequency switching and synchronous rectification ABSOLUTE MAXIMUM RATINGS(T ... See More ⇒

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Detailed specifications: IPP086N10N3G, IPP08CN10LG, IPP08CN10NG, IPP093N06N3G, IPP096N03LG, IPP100N04S4-H2, IPP100N08N3G, IPP110N06LG, RU7088R, IPP111N15N3G, IPP114N03LG, IPP114N12N3G, IPP120N04S4-01, IPP120N04S4-02, IPP120N06NG, IPP120N06S4-02, IPP120N06S4-H1

Keywords - IPP110N20N3G MOSFET specs

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 IPP110N20N3G replacement

Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.