IPP110N20N3G Datasheet and Replacement. Cross Reference Search

IPP110N20N3G Datasheet (PDF)

..1. Size:690K infineon
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IPB107N20N3 G IPP110N20N3 GIPI110N20N3 GOptiMOSTM3 Power-TransistorProduct SummaryFeaturesVDS 200 V N-channel, normal levelRDS(on),max (TO263) 10.7mW Excellent gate charge x R product (FOM)DS(on)ID 88 A Very low on-resistance RDS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant Qualified according to JEDEC1) for target appl

3.1. Size:245K inchange semiconductor
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isc N-Channel MOSFET Transistor IPP110N20N3IIPP110N20N3FEATURESStatic drain-source on-resistance:RDS(on) 11mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONIdeal for high-frequency switching and synchronous rectificationABSOLUTE MAXIMUM RATINGS(T =

4.1. Size:652K infineon
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IPB107N20NA IPP110N20NAOptiMOSTM3 Power-TransistorProduct SummaryFeaturesVDS 200 V N-channel, normal levelRDS(on),max (TO263) 10.7mW Excellent gate charge x R product (FOM)DS(on)ID 88 A Very low on-resistance RDS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant Qualified according to AEC Q101 Halogen-free according to IE

4.2. Size:245K inchange semiconductor
ipp110n20na.pdf pdf_icon

isc N-Channel MOSFET Transistor IPP110N20NAIIPP110N20NAFEATURESStatic drain-source on-resistance:RDS(on) 11mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITION Ideal for high-frequency switching and synchronous rectificationABSOLUTE MAXIMUM RATINGS(T

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , AON7408 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .