All MOSFET. IPP110N20N3G Datasheet

 

IPP110N20N3G Datasheet and Replacement


   Type Designator: IPP110N20N3G
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 300 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 88 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 26 nS
   Cossⓘ - Output Capacitance: 401 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.011 Ohm
   Package: TO220
 

 IPP110N20N3G substitution

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IPP110N20N3G Datasheet (PDF)

 ..1. Size:690K  infineon
 ipb107n20n3-g ipp110n20n3-g ipi110n20n3-g ipb107n20n3g ipp110n20n3g ipi110n20n3g.pdf pdf_icon

IPP110N20N3G

IPB107N20N3 G IPP110N20N3 GIPI110N20N3 GOptiMOSTM3 Power-TransistorProduct SummaryFeaturesVDS 200 V N-channel, normal levelRDS(on),max (TO263) 10.7mW Excellent gate charge x R product (FOM)DS(on)ID 88 A Very low on-resistance RDS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant Qualified according to JEDEC1) for target appl

 3.1. Size:245K  inchange semiconductor
 ipp110n20n3.pdf pdf_icon

IPP110N20N3G

isc N-Channel MOSFET Transistor IPP110N20N3IIPP110N20N3FEATURESStatic drain-source on-resistance:RDS(on) 11mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONIdeal for high-frequency switching and synchronous rectificationABSOLUTE MAXIMUM RATINGS(T =

 4.1. Size:652K  infineon
 ipb107n20na ipp110n20na.pdf pdf_icon

IPP110N20N3G

IPB107N20NA IPP110N20NAOptiMOSTM3 Power-TransistorProduct SummaryFeaturesVDS 200 V N-channel, normal levelRDS(on),max (TO263) 10.7mW Excellent gate charge x R product (FOM)DS(on)ID 88 A Very low on-resistance RDS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant Qualified according to AEC Q101 Halogen-free according to IE

 4.2. Size:245K  inchange semiconductor
 ipp110n20na.pdf pdf_icon

IPP110N20N3G

isc N-Channel MOSFET Transistor IPP110N20NAIIPP110N20NAFEATURESStatic drain-source on-resistance:RDS(on) 11mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITION Ideal for high-frequency switching and synchronous rectificationABSOLUTE MAXIMUM RATINGS(T

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Datasheet: IPP086N10N3G , IPP08CN10LG , IPP08CN10NG , IPP093N06N3G , IPP096N03LG , IPP100N04S4-H2 , IPP100N08N3G , IPP110N06LG , MMD60R360PRH , IPP111N15N3G , IPP114N03LG , IPP114N12N3G , IPP120N04S4-01 , IPP120N04S4-02 , IPP120N06NG , IPP120N06S4-02 , IPP120N06S4-H1 .

Keywords - IPP110N20N3G MOSFET datasheet

 IPP110N20N3G cross reference
 IPP110N20N3G equivalent finder
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 IPP110N20N3G substitution
 IPP110N20N3G replacement

 

 
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