IPP120N06NG PDF and Equivalents Search

 

IPP120N06NG PDF Specs and Replacement


   Type Designator: IPP120N06NG
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings


   Pd ⓘ - Maximum Power Dissipation: 158 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 75 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics


   tr ⓘ - Rise Time: 27 nS
   Cossⓘ - Output Capacitance: 460 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.012 Ohm
   Package: TO220
 

 IPP120N06NG substitution

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IPP120N06NG PDF Specs

 ..1. Size:737K  infineon
 ipb120n06ng ipp120n06ng.pdf pdf_icon

IPP120N06NG

IPB120N06N G IPP120N06N G Power-Transistor Product Summary Features V D O >@ 50AB AE8B278=6 2>=D4@B4@A 0=3 AG=2 @42B85820B8>= R 11 7 m + >= = O ' 270==4; 4=70=24@?4@0B8=6 B4"+ 2>64= 5@44 022>@38=6 B> # Type #)) ' ' ! #) ' ' ! Package O 1 O ... See More ⇒

 ..2. Size:1538K  cn vbsemi
 ipp120n06ng.pdf pdf_icon

IPP120N06NG

IPP120N06NG www.VBsemi.tw N-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY 175 C Junction Temperature VDS (V) RDS(on) ( ) ID (A)a TrenchFET Power MOSFET 0.011 at VGS = 10 V 60 Material categorization 60 0.012 at VGS = 4.5 V 50 D TO-220AB G S D S G N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted) Parameter Symbol Li... See More ⇒

 5.1. Size:170K  infineon
 ipb120n06s4-03 ipi120n06s4-03 ipp120n06s4-03 ipp120n06s4 ipb120n06s4 ipi120n06s4-03.pdf pdf_icon

IPP120N06NG

IPB120N06S4-03 IPI120N06S4-03, IPP120N06S4-03 OptiMOS -T2 Power-Transistor Product Summary V 60 V DS R (SMD version) 2.8 m DS(on),max I 120 A D Features N-channel - Enhancement mode PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 AEC Q101 qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green Product (RoHS compliant) 100% Avalanche teste... See More ⇒

 5.2. Size:174K  infineon
 ipi120n06s4-h1 ipp120n06s4-h1 ipb120n06s4-h1.pdf pdf_icon

IPP120N06NG

IPB120N06S4-H1 IPI120N06S4-H1, IPP120N06S4-H1 OptiMOS -T2 Power-Transistor Product Summary V 60 V DS R (SMD version) 2.1 m DS(on),max I 120 A D Features N-channel - Enhancement mode PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 AEC Q101 qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green Product (RoHS compliant) 100% Avalanche teste... See More ⇒

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Detailed specifications: IPP100N08N3G , IPP110N06LG , IPP110N20N3G , IPP111N15N3G , IPP114N03LG , IPP114N12N3G , IPP120N04S4-01 , IPP120N04S4-02 , AO4468 , IPP120N06S4-02 , IPP120N06S4-H1 , IPP126N10N3G , IPP12CN10LG , IPP12CN10NG , IPP139N08N3G , IPP147N03LG , IPP147N12N3G .

Keywords - IPP120N06NG MOSFET specs

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