IPP12CN10LG Specs and Replacement

Type Designator: IPP12CN10LG

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 125 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 69 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 9 nS

Cossⓘ - Output Capacitance: 528 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.012 Ohm

Package: TO220

IPP12CN10LG substitution

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IPP12CN10LG datasheet

 4.1. Size:614K  infineon
 ipp12cn10l-g ips12cn10l-g.pdf pdf_icon

IPP12CN10LG

IPS12CN10L G IPP12CN10L G OptiMOS 2 Power-Transistor Product Summary Features VDS 100 V N-channel, logic level RDS(on),max 12 mW Excellent gate charge x R product (FOM) DS(on) ID 69 A Very low on-resistance R DS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant Qualified according to JEDEC1) for target application Ideal for high... See More ⇒

 4.2. Size:245K  inchange semiconductor
 ipp12cn10l.pdf pdf_icon

IPP12CN10LG

isc N-Channel MOSFET Transistor IPP12CN10L IIPP12CN10L FEATURES Static drain-source on-resistance RDS(on) 12m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION reliable device for use in a wide variety of applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a... See More ⇒

 5.1. Size:858K  infineon
 ipb12cn10ng ipd12cn10ng ipi12cn10ng ipp12cn10ng ipb12cn10ng ipi12cn10ng.pdf pdf_icon

IPP12CN10LG

IPB12CN10N G IPD12CN10N G IPI12CN10N G IPP12CN10N G OptiMOS 2 Power-Transistor Product Summary Features VDS 100 V N-channel, normal level RDS(on),max (TO252) 12.4 mW Excellent gate charge x R product (FOM) DS(on) ID 67 A Very low on-resistance R DS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant Qualified according to JEDEC1)... See More ⇒

 5.2. Size:623K  infineon
 ipb12cn10n-g ipd12cn10n-g ipi12cn10n-g ipp12cn10n-g.pdf pdf_icon

IPP12CN10LG

IPB12CN10N G IPD12CN10N G IPI12CN10N G IPP12CN10N G OptiMOS 2 Power-Transistor Product Summary Features V 100 V DS N-channel, normal level R (TO252) 12.4 m DS(on),max Excellent gate charge x R product (FOM) DS(on) I 67 A D Very low on-resistance R DS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant Qualified according to JEDEC... See More ⇒

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Detailed specifications: IPP114N03LG, IPP114N12N3G, IPP120N04S4-01, IPP120N04S4-02, IPP120N06NG, IPP120N06S4-02, IPP120N06S4-H1, IPP126N10N3G, IRF740, IPP12CN10NG, IPP139N08N3G, IPP147N03LG, IPP147N12N3G, IPP16CN10LG, IPP16CN10NG, IPP180N10N3G, IPP200N15N3G

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