All MOSFET. IPP147N03LG Datasheet

 

IPP147N03LG Datasheet and Replacement


   Type Designator: IPP147N03LG
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 31 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 20 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 2.4 nS
   Cossⓘ - Output Capacitance: 350 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0147 Ohm
   Package: TO220
 

 IPP147N03LG substitution

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IPP147N03LG Datasheet (PDF)

 4.1. Size:741K  infineon
 ipp147n03l .pdf pdf_icon

IPP147N03LG

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 4.2. Size:740K  infineon
 ipp147n03l.pdf pdf_icon

IPP147N03LG

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 4.3. Size:446K  infineon
 ipp147n03l-g ipb147n03l-g.pdf pdf_icon

IPP147N03LG

Type IPP147N03L GIPB147N03L GOptiMOS3 Power-TransistorProduct SummaryFeaturesV 30 VDS Fast switching MOSFET for SMPSR 14.7mDS(on),max Optimized technology for DC/DC convertersI 20 AD Qualified according to JEDEC1) for target applications N-channel, logic level Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(

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Datasheet: IPP120N04S4-02 , IPP120N06NG , IPP120N06S4-02 , IPP120N06S4-H1 , IPP126N10N3G , IPP12CN10LG , IPP12CN10NG , IPP139N08N3G , IRF540N , IPP147N12N3G , IPP16CN10LG , IPP16CN10NG , IPP180N10N3G , IPP200N15N3G , IPP200N25N3G , IPP230N06L3G , IPP260N06N3G .

History: NDPL070N10B | AP9563GK

Keywords - IPP147N03LG MOSFET datasheet

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