All MOSFET. IPP147N03LG Datasheet

 

IPP147N03LG MOSFET. Datasheet pdf. Equivalent


   Type Designator: IPP147N03LG
   Marking Code: 147N03L
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 31 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.2 V
   |Id|ⓘ - Maximum Drain Current: 20 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 10 nC
   trⓘ - Rise Time: 2.4 nS
   Cossⓘ - Output Capacitance: 350 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0147 Ohm
   Package: TO220

 IPP147N03LG Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IPP147N03LG Datasheet (PDF)

 4.1. Size:741K  infineon
 ipp147n03l .pdf

IPP147N03LG IPP147N03LG

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 4.2. Size:740K  infineon
 ipp147n03l.pdf

IPP147N03LG IPP147N03LG

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 4.3. Size:446K  infineon
 ipp147n03l-g ipb147n03l-g.pdf

IPP147N03LG IPP147N03LG

Type IPP147N03L GIPB147N03L GOptiMOS3 Power-TransistorProduct SummaryFeaturesV 30 VDS Fast switching MOSFET for SMPSR 14.7mDS(on),max Optimized technology for DC/DC convertersI 20 AD Qualified according to JEDEC1) for target applications N-channel, logic level Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(

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