IPP147N03LG Specs and Replacement

Type Designator: IPP147N03LG

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 31 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 20 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 2.4 nS

Cossⓘ - Output Capacitance: 350 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0147 Ohm

Package: TO220

IPP147N03LG substitution

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IPP147N03LG datasheet

 4.1. Size:741K  infineon
 ipp147n03l .pdf pdf_icon

IPP147N03LG

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 4.2. Size:740K  infineon
 ipp147n03l.pdf pdf_icon

IPP147N03LG

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 4.3. Size:446K  infineon
 ipp147n03l-g ipb147n03l-g.pdf pdf_icon

IPP147N03LG

Type IPP147N03L G IPB147N03L G OptiMOS 3 Power-Transistor Product Summary Features V 30 V DS Fast switching MOSFET for SMPS R 14.7 m DS(on),max Optimized technology for DC/DC converters I 20 A D Qualified according to JEDEC1) for target applications N-channel, logic level Excellent gate charge x R product (FOM) DS(on) Very low on-resistance R DS(... See More ⇒

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Detailed specifications: IPP120N04S4-02, IPP120N06NG, IPP120N06S4-02, IPP120N06S4-H1, IPP126N10N3G, IPP12CN10LG, IPP12CN10NG, IPP139N08N3G, IRF540N, IPP147N12N3G, IPP16CN10LG, IPP16CN10NG, IPP180N10N3G, IPP200N15N3G, IPP200N25N3G, IPP230N06L3G, IPP260N06N3G

Keywords - IPP147N03LG MOSFET specs

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