All MOSFET. IPP16CN10NG Datasheet

 

IPP16CN10NG MOSFET. Datasheet pdf. Equivalent


   Type Designator: IPP16CN10NG
   Marking Code: 16CN10N
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 100 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 53 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 36 nC
   trⓘ - Rise Time: 14 nS
   Cossⓘ - Output Capacitance: 364 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.016 Ohm
   Package: TO220

 IPP16CN10NG Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IPP16CN10NG Datasheet (PDF)

 ..1. Size:906K  infineon
 ipb16cn10ng ipd16cn10ng ipi16cn10ng ipp16cn10ng.pdf

IPP16CN10NG IPP16CN10NG

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 4.1. Size:661K  infineon
 ipb16cn10n ipd16cn10n ipi16cn10n ipp16cn10n.pdf

IPP16CN10NG IPP16CN10NG

www.DataSheet4U.comIPB16CN10N G IPD16CN10N GIPI16CN10N G IPP16CN10N GOptiMOS2 Power-TransistorProduct SummaryFeaturesV 100 VDS N-channel, normal levelR 16mDS(on),max (TO252) Excellent gate charge x R product (FOM)DS(on)I 53 AD Very low on-resistance RDS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant Qualified

 4.2. Size:245K  inchange semiconductor
 ipp16cn10n.pdf

IPP16CN10NG IPP16CN10NG

isc N-Channel MOSFET Transistor IPP16CN10NIIPP16CN10NFEATURESStatic drain-source on-resistance:RDS(on) 16mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM RATINGS(T =25)a

 5.1. Size:545K  infineon
 ipp16cn10l1.pdf

IPP16CN10NG IPP16CN10NG

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Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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