IPP260N06N3G Datasheet and Replacement. Cross Reference Search

IPP260N06N3G Datasheet (PDF)

3.1. Size:296K infineon
ipb260n06n3-g ipp260n06n3-g.pdf pdf_icon

Type IPB260N06N3 G IPP260N06N3 GOptiMOS3 Power-TransistorProduct SummaryFeaturesV 60 VDS Ideal for high frequency switching and sync. rec.R 26mDS(on),max Optimized technology for DC/DC convertersI 27 AD Excellent gate charge x R product (FOM)DS(on) N-channel, normal level 100% avalanche tested Pb-free plating; RoHS compliant Qualifie

9.1. Size:1032K infineon
ipb26cn10ng ipd25cn10ng ipi26cn10ng ipp26cn10ng.pdf pdf_icon

IPB26CN10N G IPD25CN10N GIPI26CN10N G IPP26CN10N G OptiMOS2 Power-TransistorProduct Summary FeaturesVDS 100 V N-channel, normal levelRDS(on),max (TO252) 25 mW Excellent gate charge x R product (FOM)DS(on)ID 35 A Very low on-resistance RDS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant Qualified according to JEDEC1)

9.2. Size:707K infineon
ipb26cn10n-g ipd25cn10n-g ipi26cn10n-g ipp26cn10n-g ipu25cn10n-g.pdf pdf_icon

IPB26CN10N G IPD25CN10N GIPI26CN10N G IPP26CN10N G IPU25CN10N GOptiMOS2 Power-TransistorProduct SummaryFeaturesV 100 VDS N-channel, normal levelR 25mDS(on),max (TO252) Excellent gate charge x R product (FOM)DS(on)I 35 AD Very low on-resistance RDS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant Qualified accordi

9.3. Size:246K inchange semiconductor
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INCHANGE Semiconductorisc N-Channel MOSFET Transistor IPP26CN10NIIPP26CN10NFEATURESStatic drain-source on-resistance:RDS(on) 26mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXI

Datasheet: IPP147N03LG , IPP147N12N3G , IPP16CN10LG , IPP16CN10NG , IPP180N10N3G , IPP200N15N3G , IPP200N25N3G , IPP230N06L3G , IRF640N , IPP26CN10NG , IPP320N20N3G , IPP35CN10NG , IPP50CN10NG , IPP50R140CP , IPP50R199CP , IPP50R250CP , IPP50R299CP .