IPP530N15N3G Datasheet. Specs and Replacement

Type Designator: IPP530N15N3G  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 68 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 150 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 21 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 9 nS

Cossⓘ - Output Capacitance: 80 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.053 Ohm

Package: TO220

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IPP530N15N3G datasheet

 ..1. Size:983K  infineon
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IPP530N15N3G

# ! ! # ! ! # ! ! ## ! ! TM # A0A= 2?E #2=@86? !C66 1) R + F2= 7 65 244@C5 ?8 E@ % 7@C E2C86E 2AA= 42E @? R $562= 7@C 9 89 7C6BF6?4J DH ... See More ⇒

 ..2. Size:961K  infineon
 ipb530n15n3g ipd530n15n3g ipi530n15n3g ipp530n15n3g.pdf pdf_icon

IPP530N15N3G

IPB530N15N3 G IPD530N15N3 G IPI530N15N3 G IPP530N15N3 G OptiMOSTM3 Power-Transistor Product Summary Features VDS 150 V N-channel, normal level RDS(on),max 53 mW Excellent gate charge x R product (FOM) DS(on) ID 21 A Very low on-resistance R DS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant; Halogen Free Qualified according to ... See More ⇒

 3.1. Size:245K  inchange semiconductor
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IPP530N15N3G

isc N-Channel MOSFET Transistor IPP530N15N3 IIPP530N15N3 FEATURES Static drain-source on-resistance RDS(on) 53m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Ideal for high-frequency switching and synchronous rectification ABSOLUTE MAXIMUM RATINGS(T... See More ⇒

Detailed specifications: IPP50R140CP, IPP50R199CP, IPP50R250CP, IPP50R299CP, IPP50R350CP, IPP50R380CE, IPP50R399CP, IPP50R520CP, IRF630, IPP600N25N3G, IPP60R099C6, IPP60R099CP, IPP60R099CPA, IPP60R125C6, IPP60R125CP, IPP60R160C6, IPP60R165CP

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