IPP60R250CP PDF and Equivalents Search

 ..1. Size:622K  infineon
 ipp60r250cp.pdf

IPP60R250CP C IMOSTM # A0 9 for industrial grade applications 688DG9>CC6CI; Halogen free mold compound PG TO220 ... See More ⇒

 ..2. Size:245K  inchange semiconductor
 ipp60r250cp.pdf

isc N-Channel MOSFET Transistor IPP60R250CP IIPP60R250CP FEATURES Static drain-source on-resistance RDS(on) 0.25 Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Ultra low gate charge High peak current capability ABSOLUTE MAXIMUM RATINGS(T =25 ) a... See More ⇒

 7.1. Size:2632K  infineon
 ipb60r230p6 ipw60r230p6 ipb60r230p6 ipp60r230p6 ipa60r230p6.pdf

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS P6 600V CoolMOS P6 Power Transistor IPx60R230P6 Data Sheet Rev. 2.2 Final Power Management & Multimarket 600V CoolMOS P6 Power Transistor IPW60R230P6, IPB60R230P6, IPP60R230P6, IPA60R230P6 TO-247 D PAK TO-220 1 Description tab tab CoolMOS is a revolutionary technology for high voltage power MOSFETs, ... See More ⇒

 7.2. Size:2865K  infineon
 ipa60r280p6 ipp60r280p6 ipw60r280p6.pdf

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS P6 600V CoolMOS P6 Power Transistor IPx60R280P6 Data Sheet Rev. 2.1 Final Power Management & Multimarket 600V CoolMOS P6 Power Transistor IPW60R280P6, IPP60R280P6, IPA60R280P6 TO-247 TO-220 TO-220 FP 1 Description tab CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed accordi... See More ⇒

 7.3. Size:1451K  infineon
 ipp60r280c6.pdf

MOSFET + =L9D - PA... See More ⇒

 7.4. Size:548K  infineon
 ipp60r299cp.pdf

IPP60R299CP C IMOS # A0 9 for industrial grade applications 688DG9>CC6CI; Halogen free mold compound PG TO220 7!"% ... See More ⇒

 7.5. Size:1666K  infineon
 ipp60r280p7.pdf

IPP60R280P7 MOSFET PG-TO 220 600V CoolMOS P7 Power Transistor The CoolMOS 7th generation platform is a revolutionary technology for tab high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The 600V CoolMOS P7 series is the successor to the CoolMOS P6 series. It combines the benefits of a fast switching SJ ... See More ⇒

 7.6. Size:2886K  infineon
 ipa60r230p6 ipp60r230p6 ipw60r230p6.pdf

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS P6 600V CoolMOS P6 Power Transistor IPx60R230P6 Data Sheet Rev. 2.1 Final Power Management & Multimarket 600V CoolMOS P6 Power Transistor IPW60R230P6, IPP60R230P6, IPA60R230P6 TO-247 TO-220 TO-220 FP 1 Description tab CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed accordi... See More ⇒

 7.7. Size:1012K  infineon
 ipp60r280e6 ipa60r280e6 ipw60r280e6.pdf

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS E6 600V 600V CoolMOS E6 Power Transistor IPx60R280E6 Data Sheet Rev. 2.3 Final Power Management & Multimarket 600V CoolMOS E6 Power Transistor IPP60R280E6, IPA60R280E6 IPW60R280E6 1 Description CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) pri... See More ⇒

 7.8. Size:1718K  infineon
 ipp60r280cfd7.pdf

IPP60R280CFD7 MOSFET PG-TO 220 600V CoolMOS CFD7 Power Transistor CoolMOS is a revolutionary technology for high voltage power tab MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The latest CoolMOS CFD7 is the successor to the CoolMOS CFD2 series and is an optimized platform tailored to target soft switching application... See More ⇒

 7.9. Size:1665K  infineon
 ipp60r210cfd7.pdf

IPP60R210CFD7 MOSFET PG-TO 220 600V CoolMOS CFD7 Power Transistor CoolMOS is a revolutionary technology for high voltage power tab MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The latest CoolMOS CFD7 is the successor to the CoolMOS CFD2 series and is an optimized platform tailored to target soft switching application... See More ⇒

 7.10. Size:1975K  infineon
 ipp60r280e6 2.0.pdf

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS E6 600V CoolMOS E6 Power Transistor IPx60R280E6 Data Sheet Rev. 2.0, 2010-04-09 Final Industrial & Multimarket 600V CoolMOS E6 Power Transistor IPP60R280E6, IPA60R280E6 IPW60R280E6 1 Description CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ)... See More ⇒

 7.11. Size:3109K  infineon
 ipw60r230p6 ipb60r230p6 ipp60r230p6 ipa60r230p6.pdf

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS P6 600V CoolMOS P6 Power Transistor IPx60R230P6 Data Sheet Rev. 2.2 Final Power Management & Multimarket 600V CoolMOS P6 Power Transistor IPW60R230P6, IPB60R230P6, IPP60R230P6, IPA60R230P6 TO-247 D PAK TO-220 1 Description tab tab CoolMOS is a revolutionary technology for high voltage power MOSFETs, ... See More ⇒

 7.12. Size:2621K  infineon
 ipw60r280p6 ipb60r280p6 ipp60r280p6 ipa60r280p6.pdf

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS P6 600V CoolMOS P6 Power Transistor IPx60R280P6 Data Sheet Rev. 2.2 Final Power Management & Multimarket 600V CoolMOS P6 Power Transistor IPW60R280P6, IPB60R280P6, IPP60R280P6, IPA60R280P6 TO-247 D PAK TO-220 1 Description tab tab CoolMOS is a revolutionary technology for high voltage power MOSFETs, ... See More ⇒

 7.13. Size:1587K  infineon
 ipa60r280c6 ipb60r280c6 ipi60r280c6 ipp60r280c6 ipw60r280c6.pdf

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 600V 600V CoolMOS C6 Power Transistor IPx60R280C6 Data Sheet Rev. 2.2 Final Power Management & Multimarket 600V C IMOS C6 P wer Transist r IPA60R280C6, IPB60R280C6 IPI60R280C6, IPP60R280C6 IPW60R280C6 1 Descripti n CoolMOS is a revolutionary technology for high voltage power MOSFETs designed according... See More ⇒

 7.14. Size:245K  inchange semiconductor
 ipp60r230p6.pdf

isc N-Channel MOSFET Transistor IPP60R230P6 IIPP60R230P6 FEATURES Static drain-source on-resistance RDS(on) 0.23 Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Provide all benefits of a fast switching super junction MOS while not sacrificing ease of use... See More ⇒

 7.15. Size:245K  inchange semiconductor
 ipp60r280c6.pdf

isc N-Channel MOSFET Transistor IPP60R280C6 IIPP60R280C6 FEATURES Static drain-source on-resistance RDS(on) 0.28 Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Provide all benefits of a fast switching super junction MOS while not sacrificing ease of use... See More ⇒

 7.16. Size:245K  inchange semiconductor
 ipp60r299cp.pdf

isc N-Channel MOSFET Transistor IPP60R299CP IIPP60R299CP FEATURES Static drain-source on-resistance RDS(on) 0.299 Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Ultra low gate charge High peak current capability ABSOLUTE MAXIMUM RATINGS(T =25 ) ... See More ⇒

 7.17. Size:245K  inchange semiconductor
 ipp60r280p7.pdf

isc N-Channel MOSFET Transistor IPP60R280P7 IIPP60R280P7 FEATURES Static drain-source on-resistance RDS(on) 0.28 Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Combines the benefits of a fast switching SJ MOSFET with excellent ease of use ABSOLUTE MA... See More ⇒

 7.18. Size:246K  inchange semiconductor
 ipp60r280cfd7.pdf

isc N-Channel MOSFET Transistor IPP60R280CFD7,IIPP60R280CFD7 FEATURES Static drain-source on-resistance RDS(on) 0.28 Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION This new product series blends all advantages of a fast switching technology together with ... See More ⇒

 7.19. Size:245K  inchange semiconductor
 ipp60r280e6.pdf

isc N-Channel MOSFET Transistor IPP60R280E6 IIPP60R280E6 FEATURES Static drain-source on-resistance RDS(on) 0.28 Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Provide all benefits of a fast switching SJ MOSFET while not sacrificing ease of use ABSOL... See More ⇒

 7.20. Size:245K  inchange semiconductor
 ipp60r280p6.pdf

isc N-Channel MOSFET Transistor IPP60R280P6 IIPP60R280P6 FEATURES Static drain-source on-resistance RDS(on) 0.28 Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Provide all benefits of a fast switching super junction MOS while not sacrificing ease of use... See More ⇒