IPP60R450E6 Specs and Replacement
Type Designator: IPP60R450E6
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 74 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 9.2 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 9 nS
Cossⓘ - Output Capacitance: 41 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.45 Ohm
Package: TO220
IPP60R450E6 substitution
- MOSFET ⓘ Cross-Reference Search
IPP60R450E6 datasheet
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IPP60R022S7 MOSFET PG-TO 220 600V CoolMOS SJ S7 Power Device IPP60R022S7 enables the best price performance for low frequency tab switching applications. CoolMOS S7 boasts the lowest Rdson values for a HV SJ MOSFET, with distinctive increase of energy efficiency. CoolMOS S7 is optimized for static switching and high current applications. It is an ideal fit for solid state... See More ⇒
ipa60r125c6 ipb60r125c6 ipp60r125c6 ipw60r125c6.pdf
MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 600V 600V CoolMOS C6 Power Transistor IPx60R125C6 Data Sheet Rev. 2.3 Final Power Management & Multimarket 600V C IMOS C6 P wer Transist r IPA60R125C6, IPB60R125C6 IPP60R125C6 IPW60R125C6 1 Descripti n CoolMOS is a revolutionary technology for high voltage power MOSFETs designed according to the superj... See More ⇒
ipd60r380c6 ipi60r380c6 ipb60r380c6 ipp60r380c6 ipa60r380c6.pdf
MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 600V 600V CoolMOS C6 Power Transistor IPx60R380C6 Data Sheet Rev. 2.3 Final Power Management & Multimarket 600V C IMOS C6 P wer Transist r IPD60R380C6, IPI60R380C6 IPB60R380C6, IPP60R380C6 IPA60R380C6 1 Descripti n CoolMOS is a revolutionary technology for high voltage power MOSFETs designed according... See More ⇒
ipp60r360p7.pdf
IPP60R360P7 MOSFET PG-TO 220 600V CoolMOS P7 Power Transistor The CoolMOS 7th generation platform is a revolutionary technology for tab high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The 600V CoolMOS P7 series is the successor to the CoolMOS P6 series. It combines the benefits of a fast switching SJ ... See More ⇒
ipp60r190p6.pdf
MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS P6 600V CoolMOS P6 Power Transistor IPP60R190P6 Data Sheet Rev. 2.0 Final Power Management & Multimarket 600V CoolMOS P6 Power Transistor IPP60R190P6 TO-220 1 Description CoolMOS is a revolutionary technology for high voltage power tab MOSFETs, designed according to the superjunction (SJ) principle and ... See More ⇒
ipp60r105cfd7.pdf
IPP60R105CFD7 MOSFET PG-TO 220 600V CoolMOS CFD7 Power Transistor CoolMOS is a revolutionary technology for high voltage power tab MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The latest CoolMOS CFD7 is the successor to the CoolMOS CFD2 series and is an optimized platform tailored to target soft switching application... See More ⇒
ipw60r125p6 ipp60r125p6 ipa60r125p6.pdf
MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS P6 600V CoolMOS P6 Power Transistor IPx60R125P6 Data Sheet Rev. 2.0 Final Power Management & Multimarket 600V CoolMOS P6 Power Transistor IPW60R125P6, IPP60R125P6, IPA60R125P6 TO-247 TO-220 TO-220 FP 1 Description tab CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed accordi... See More ⇒
ipb60r380p6 ipp60r380p6 ipd60r380p6 ipa60r380p6.pdf
IPB60R380P6, IPP60R380P6, IPD60R380P6, IPA60R380P6 MOSFET D PAK PG-TO 220 DPAK 600V CoolMOS P6 Power Transistor tab tab tab CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and 2 2 pioneered by Infineon Technologies. CoolMOS P6 series combines the 1 1 3 3 experience of the leading SJ MOSFET suppli... See More ⇒
ipp60r170cfd7.pdf
IPP60R170CFD7 MOSFET PG-TO 220 600V CoolMOS CFD7 Power Transistor CoolMOS is a revolutionary technology for high voltage power tab MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The latest CoolMOS CFD7 is the successor to the CoolMOS CFD2 series and is an optimized platform tailored to target soft switching application... See More ⇒
ipa60r160p6 ipp60r160p6 ipw60r160p6.pdf
MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS P6 600V CoolMOS P6 Power Transistor IPx60R160P6 Data Sheet Rev. 2.1 Final Power Management & Multimarket 600V CoolMOS P6 Power Transistor IPW60R160P6, IPP60R160P6, IPA60R160P6 TO-247 TO-220 TO-220 FP 1 Description tab CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed accordi... See More ⇒
ipp60r520cp.pdf
IPP60R520CP C IMOSTM # A0 9 for industrial grade applications 688DG9>CC6CI; Halogen free mold compound PG TO220 ... See More ⇒
ipp60r380e6 ipa60r380e6 ipd60r380e6.pdf
MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS E6 600V 600V CoolMOS E6 Power Transistor IPx60R380E6 Data Sheet Rev. 2.6 Final Power Management & Multimarket C lMO e n i t I I I D O O D 1 Descripti n t b tab C lMO i e l ti n te n l i lt e p e MO e i ne in t t e pej n ti n ) pin iple n 2 pi neee b In ine n e n l ie C... See More ⇒
ipp60r600p7.pdf
IPP60R600P7 MOSFET PG-TO 220 600V CoolMOS P7 Power Transistor The CoolMOS 7th generation platform is a revolutionary technology for tab high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The 600V CoolMOS P7 series is the successor to the CoolMOS P6 series. It combines the benefits of a fast switching SJ ... See More ⇒
ipa60r280c6 ipb60r280c6 ipi60r280c6 ipp60r280c6 ipw60r280c6.pdf
MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 600V 600V CoolMOS C6 Power Transistor IPx60R280C6 Data Sheet Rev. 2.2 Final Power Management & Multimarket 600V C IMOS C6 P wer Transist r IPA60R280C6, IPB60R280C6 IPI60R280C6, IPP60R280C6 IPW60R280C6 1 Descripti n CoolMOS is a revolutionary technology for high voltage power MOSFETs designed according... See More ⇒
ipp60r040c7.pdf
isc N-Channel MOSFET Transistor IPP60R040C7 IIPP60R040C7 FEATURES Static drain-source on-resistance RDS(on) 0.04 Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Combine the experience of the leading SJ MOSFET supplier with high class innovation ABSOLU... See More ⇒
ipp60r125p6.pdf
isc N-Channel MOSFET Transistor IPP60R125P6 IIPP60R125P6 FEATURES Static drain-source on-resistance RDS(on) 0.125 Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Provide all benefits of a fast switching SJ MOSFET while not sacrificing ease of use ABSO... See More ⇒
ipp60r199cp.pdf
isc N-Channel MOSFET Transistor IPP60R199CP IIPP60R199CP FEATURES Static drain-source on-resistance RDS(on) 0.199 Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Ultra low gate charge High peak current capability ABSOLUTE MAXIMUM RATINGS(T =25 ) ... See More ⇒
ipp60r600cp.pdf
isc N-Channel MOSFET Transistor IPP60R600CP IIPP60R600CP FEATURES Static drain-source on-resistance RDS(on) 0.6 Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Ultra low gate charge High peak current capability ABSOLUTE MAXIMUM RATINGS(T =25 ) a ... See More ⇒
ipp60r099c7.pdf
isc N-Channel MOSFET Transistor IPP60R099C7 IIPP60R099C7 FEATURES Static drain-source on-resistance RDS(on) 0.099 Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Combines the benefits of a fast switching SJ MOSFET with excellent ease of use ABSOLUTE M... See More ⇒
ipp60r230p6.pdf
isc N-Channel MOSFET Transistor IPP60R230P6 IIPP60R230P6 FEATURES Static drain-source on-resistance RDS(on) 0.23 Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Provide all benefits of a fast switching super junction MOS while not sacrificing ease of use... See More ⇒
ipp60r070cfd7.pdf
INCHANGE Semiconductor isc N-Channel MOSFET Transistor IPP60R070CFD7 FEATURES With TO-220 packaging High speed switching Very high commutation ruggedness Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS PFC stages LCD & PDP TV Power supply Switching applications ABSOLUTE MAX... See More ⇒
ipp60r1k4c6.pdf
isc N-Channel MOSFET Transistor IPP60R1K4C6 IIPP60R1K4C6 FEATURES Static drain-source on-resistance RDS(on) 1.4 Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Provide all benefits of a fast switching SJ MOSFET while not sacrificing ease of use ABSOLU... See More ⇒
ipp60r280c6.pdf
isc N-Channel MOSFET Transistor IPP60R280C6 IIPP60R280C6 FEATURES Static drain-source on-resistance RDS(on) 0.28 Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Provide all benefits of a fast switching super junction MOS while not sacrificing ease of use... See More ⇒
ipp60r060c7.pdf
isc N-Channel MOSFET Transistor IPP60R060C7 IIPP60R060C7 FEATURES Static drain-source on-resistance RDS(on) 0.06 Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Combine the experience of the leading SJ MOSFET supplier with high class innovation ABSOLU... See More ⇒
ipp60r060p7.pdf
INCHANGE Semiconductor isc N-Channel MOSFET Transistor IPP60R060P7 FEATURES With low gate drive requirements Very high commutation ruggedness Extremely high frequency operation 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications LCD&PDP TV PC silverbox UPS and solar ABS... See More ⇒
ipp60r190c6.pdf
isc N-Channel MOSFET Transistor IPP60R190C6 IIPP60R190C6 FEATURES Static drain-source on-resistance RDS(on) 0.19 Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Provide all benefits of a fast switching super junction MOS while not sacrificing ease of use... See More ⇒
ipp60r125cp.pdf
isc N-Channel MOSFET Transistor IPP60R125CP IIPP60R125CP FEATURES Static drain-source on-resistance RDS(on) 0.125 Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Ultra low gate charge High peak current capability ABSOLUTE MAXIMUM RATINGS(T =25 ) ... See More ⇒
ipp60r190e6.pdf
isc N-Channel MOSFET Transistor IPP60R190E6 IIPP60R190E6 FEATURES Static drain-source on-resistance RDS(on) 0.19 Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Provide all benefits of a fast switching SJ MOSFET while not sacrificing ease of use ABSOL... See More ⇒
ipp60r299cp.pdf
isc N-Channel MOSFET Transistor IPP60R299CP IIPP60R299CP FEATURES Static drain-source on-resistance RDS(on) 0.299 Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Ultra low gate charge High peak current capability ABSOLUTE MAXIMUM RATINGS(T =25 ) ... See More ⇒
ipp60r099c6.pdf
isc N-Channel MOSFET Transistor IPP60R099C6 IIPP60R099C6 FEATURES Static drain-source on-resistance RDS(on) 0.099 Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Provide all benefits of a fast switching super junction MOS while not Sacrificing ease of use... See More ⇒
ipp60r280p7.pdf
isc N-Channel MOSFET Transistor IPP60R280P7 IIPP60R280P7 FEATURES Static drain-source on-resistance RDS(on) 0.28 Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Combines the benefits of a fast switching SJ MOSFET with excellent ease of use ABSOLUTE MA... See More ⇒
ipp60r950c6.pdf
isc N-Channel MOSFET Transistor IPP60R950C6 IIPP60R950C6 FEATURES Static drain-source on-resistance RDS(on) 0.95 Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Provide all benefits of a fast switching super junction MOS while not sacrificing ease of use... See More ⇒
ipp60r520e6.pdf
isc N-Channel MOSFET Transistor IPP60R520E6 IIPP60R520E6 FEATURES Static drain-source on-resistance RDS(on) 0.52 Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Provide all benefits of a fast switching SJ MOSFET while not sacrificing ease of use ABSOL... See More ⇒
ipp60r180c7.pdf
isc N-Channel MOSFET Transistor IPP60R180C7 IIPP60R180C7 FEATURES Static drain-source on-resistance RDS(on) 0.18 Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Combines the experience of the leading SJ MOSFET supplier with high class innovation ABSOL... See More ⇒
ipp60r160c6.pdf
isc N-Channel MOSFET Transistor IPP60R160C6 IIPP60R160C6 FEATURES Static drain-source on-resistance RDS(on) 0.16 Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Provide all benefits of a fast switching super junction MOS while not sacrificing ease of use... See More ⇒
ipp60r600e6.pdf
isc N-Channel MOSFET Transistor IPP60R600E6 IIPP60R600E6 FEATURES Static drain-source on-resistance RDS(on) 0.6 Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Provide all benefits of a fast switching super junction MOS while not sacrificing ease of use ... See More ⇒
ipp60r380p6.pdf
isc N-Channel MOSFET Transistor IPP60R380P6 IIPP60R380P6 FEATURES Static drain-source on-resistance RDS(on) 0.38 Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Provide all benefits of a fast switching super junction MOS while not sacrificing ease of use... See More ⇒
ipp60r750e6.pdf
isc N-Channel MOSFET Transistor IPP60R750E6 IIPP60R750E6 FEATURES Static drain-source on-resistance RDS(on) 0.75 Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Provide all benefits of a fast switching super junction MOS while not sacrificing ease of use... See More ⇒
ipp60r280cfd7.pdf
isc N-Channel MOSFET Transistor IPP60R280CFD7,IIPP60R280CFD7 FEATURES Static drain-source on-resistance RDS(on) 0.28 Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION This new product series blends all advantages of a fast switching technology together with ... See More ⇒
ipp60r120c7.pdf
isc N-Channel MOSFET Transistor IPP60R120C7 IIPP60R120C7 FEATURES Static drain-source on-resistance RDS(on) 0.12 Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Combines the experience of the leading SJ MOSFET supplier with high class innovation ABSOL... See More ⇒
ipp60r099cp.pdf
isc N-Channel MOSFET Transistor IPP60R099CP IIPP60R099CP FEATURES Static drain-source on-resistance RDS(on) 0.099 Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Ultra low gate charge High peak current capability ABSOLUTE MAXIMUM RATINGS(T =25 ) ... See More ⇒
ipp60r080p7.pdf
isc N-Channel MOSFET Transistor IPP60R080P7 IIPP60R080P7 FEATURES Static drain-source on-resistance RDS(on) 0.08 Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Combines the benefits of a fast switching SJ MOSFET with excellent ease of use ABSOLUTE MA... See More ⇒
ipp60r330p6.pdf
isc N-Channel MOSFET Transistor IPP60R330P6 IIPP60R330P6 FEATURES Static drain-source on-resistance RDS(on) 0.33 Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Provide all benefits of a fast switching super junction MOS while not sacrificing ease of use... See More ⇒
ipp60r099p7.pdf
isc N-Channel MOSFET Transistor IPP60R099P7 IIPP60R099P7 FEATURES Static drain-source on-resistance RDS(on) 0.099 Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Combines the benefits of a fast switching SJ MOSFET with excellent ease of use ABSOLUTE M... See More ⇒
ipp60r165cp.pdf
isc N-Channel MOSFET Transistor IPP60R165CP IIPP60R165CP FEATURES Static drain-source on-resistance RDS(on) 0.165 Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Ultra low gate charge High peak current capability ABSOLUTE MAXIMUM RATINGS(T =25 )... See More ⇒
ipp60r380c6.pdf
isc N-Channel MOSFET Transistor IPP60R380C6 IIPP60R380C6 FEATURES Static drain-source on-resistance RDS(on) 0.38 Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Provide all benefits of a fast switching super junction MOS while not sacrificing ease of use... See More ⇒
ipp60r250cp.pdf
isc N-Channel MOSFET Transistor IPP60R250CP IIPP60R250CP FEATURES Static drain-source on-resistance RDS(on) 0.25 Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Ultra low gate charge High peak current capability ABSOLUTE MAXIMUM RATINGS(T =25 ) a... See More ⇒
ipp60r180p7.pdf
isc N-Channel MOSFET Transistor IPP60R180P7 IIPP60R180P7 FEATURES Static drain-source on-resistance RDS(on) 0.18 Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Combines the benefits of a fast switching SJ MOSFET with excellent ease of use ABSOLUTE MA... See More ⇒
ipp60r099p6.pdf
isc N-Channel MOSFET Transistor IPP60R099P6 IIPP60R099P6 FEATURES Static drain-source on-resistance RDS(on) 0.099 Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Provide all benefits of a fast switching super junction MOS while not sacrificing ease of us... See More ⇒
ipp60r600c6.pdf
isc N-Channel MOSFET Transistor IPP60R600C6 IIPP60R600C6 FEATURES Static drain-source on-resistance RDS(on) 0.6 Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Provide all benefits of a fast switching super junction MOS while not sacrificing ease of use ... See More ⇒
ipp60r385cp.pdf
isc N-Channel MOSFET Transistor IPP60R385CP IIPP60R385CP FEATURES Static drain-source on-resistance RDS(on) 0.385 Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Ultra low gate charge High peak current capability ABSOLUTE MAXIMUM RATINGS(T =25 ) ... See More ⇒
ipp60r280e6.pdf
isc N-Channel MOSFET Transistor IPP60R280E6 IIPP60R280E6 FEATURES Static drain-source on-resistance RDS(on) 0.28 Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Provide all benefits of a fast switching SJ MOSFET while not sacrificing ease of use ABSOL... See More ⇒
ipp60r280p6.pdf
isc N-Channel MOSFET Transistor IPP60R280P6 IIPP60R280P6 FEATURES Static drain-source on-resistance RDS(on) 0.28 Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Provide all benefits of a fast switching super junction MOS while not sacrificing ease of use... See More ⇒
ipp60r074c6.pdf
INCHANGE Semiconductor isc N-Channel MOSFET Transistor IPP60R074C6 FEATURES With low gate drive requirements Very high commutation ruggedness Extremely high frequency operation 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications LCD&PDP TV PC silverbox UPS and solar ABS... See More ⇒
ipp60r125c6.pdf
isc N-Channel MOSFET Transistor IPP60R125C6 IIPP60R125C6 FEATURES Static drain-source on-resistance RDS(on) 0.125 Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Provide all benefits of a fast switching super junction MOS while not sacrificing ease of us... See More ⇒
ipp60r360p7.pdf
INCHANGE Semiconductor isc N-Channel MOSFET Transistor IPP60R360P7 IIPP60R360P7 FEATURES Static drain-source on-resistance RDS(on) 0.36 Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Combines the benefits of a fast switching SJ MOSFET with excellent ea... See More ⇒
ipp60r190p6.pdf
isc N-Channel MOSFET Transistor IPP60R190P6 IIPP60R190P6 FEATURES Static drain-source on-resistance RDS(on) 0.19 Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Provide all benefits of a fast switching super junction MOS while not sacrificing ease of use... See More ⇒
ipp60r170cfd7.pdf
isc N-Channel MOSFET Transistor IPP60R170CFD7 IIPP60R170CFD7 FEATURES Static drain-source on-resistance RDS(on) 0.17 Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION This new product series blends all advantages of a fast switching technology together w... See More ⇒
ipp60r600p6.pdf
isc N-Channel MOSFET Transistor IPP60R600P6 IIPP60R600P6 FEATURES Static drain-source on-resistance RDS(on) 0.6 Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Provide all benefits of a fast switching super junction MOS while not sacrificing ease of use ... See More ⇒
ipp60r160p6.pdf
isc N-Channel MOSFET Transistor IPP60R160P6 IIPP60R160P6 FEATURES Static drain-source on-resistance RDS(on) 0.16 Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Provide all benefits of a fast switching super junction MOS while not sacrificing ease of use ... See More ⇒
ipp60r520cp.pdf
isc N-Channel MOSFET Transistor IPP60R520CP IIPP60R520CP FEATURES Static drain-source on-resistance RDS(on) 0.52 Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Ultra low gate charge High peak current capability ABSOLUTE MAXIMUM RATINGS(T =25 ) a... See More ⇒
ipp60r600p7.pdf
isc N-Channel MOSFET Transistor IPP60R600P7 IIPP60R600P7 FEATURES Static drain-source on-resistance RDS(on) 0.6 Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Combines the benefits of a fast switching SJ MOSFET with excellent ease of use ABSOLUTE MAX... See More ⇒
Detailed specifications: IPP60R199CP, IPP60R250CP, IPP60R280C6, IPP60R280E6, IPP60R299CP, IPP60R380C6, IPP60R380E6, IPP60R385CP, 12N60, IPP60R520C6, IPP60R520CP, IPP60R520E6, IPP60R600C6, IPP60R600CP, IPP60R600E6, IPP60R750E6, IPP60R950C6
Keywords - IPP60R450E6 MOSFET specs
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IPP60R450E6 equivalent finder
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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs
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