IPP60R520C6 Specs and Replacement

Type Designator: IPP60R520C6

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 66 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 8.1 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 10 nS

Cossⓘ - Output Capacitance: 35 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.52 Ohm

Package: TO220

IPP60R520C6 substitution

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IPP60R520C6 datasheet

 ..1. Size:917K  infineon
ipp60r520c6 2.0.pdf pdf_icon

IPP60R520C6

MOSFET + =L9D - PA... See More ⇒

 4.1. Size:552K  infineon
ipp60r520cp.pdf pdf_icon

IPP60R520C6

IPP60R520CP C IMOSTM # A0 9 for industrial grade applications 688DG9>CC6CI; Halogen free mold compound PG TO220 ... See More ⇒

 4.2. Size:245K  inchange semiconductor
ipp60r520cp.pdf pdf_icon

IPP60R520C6

isc N-Channel MOSFET Transistor IPP60R520CP IIPP60R520CP FEATURES Static drain-source on-resistance RDS(on) 0.52 Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Ultra low gate charge High peak current capability ABSOLUTE MAXIMUM RATINGS(T =25 ) a... See More ⇒

 5.1. Size:1261K  infineon
ipp60r520e6.pdf pdf_icon

IPP60R520C6

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS E6 600V CoolMOS E6 Power Transistor IPx60R520E6 Data Sheet Rev. 2.0, 2010-04-09 Final Industrial & Multimarket 600V CoolMOS E6 Power Transistor IPP60R520E6, IPA60R520E6 1 Description CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle a... See More ⇒

Detailed specifications: IPP60R250CP, IPP60R280C6, IPP60R280E6, IPP60R299CP, IPP60R380C6, IPP60R380E6, IPP60R385CP, IPP60R450E6, 5N65, IPP60R520CP, IPP60R520E6, IPP60R600C6, IPP60R600CP, IPP60R600E6, IPP60R750E6, IPP60R950C6, IPP65R280C6

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