IPS090N03LG Datasheet and Replacement
Type Designator: IPS090N03LG
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 42 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 40 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 3 nS
Cossⓘ - Output Capacitance: 500 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.009 Ohm
Package: TO251
IPS090N03LG substitution
IPS090N03LG Datasheet (PDF)
ipd090n03lg ipf090n03lg ips090n03lg ipu090n03lg.pdf

Type IPD090N03L G IPF090N03L GIPS090N03L G IPU090N03L GOptiMOS3 Power-TransistorProduct SummaryFeaturesV 30 VDS Fast switching MOSFET for SMPSR 9mDS(on),max Optimized technology for DC/DC convertersI 40 AD Qualified according to JEDEC1) for target applications N-channel, logic level Excellent gate charge x R product (FOM)DS(on) Very low
ips090n03l.pdf

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ipd09n03la ipf09n03la ips09n03la ipu09n03la.pdf

IPD09N03LA IPF09N03LAIPS09N03LA IPU09N03LAOptiMOS2 Power-TransistorProduct SummaryFeaturesV 25 VDS Ideal for high-frequency dc/dc convertersR (SMD version) 8.6mDS(on),max Qualified according to JEDEC1) for target applicationI 50 AD N-channel, logic level Excellent gate charge x R product (FOM)DS(on) Superior thermal resistance 175 C
Datasheet: IPP90R340C3 , IPP90R500C3 , IPP90R800C3 , IPS031N03LG , IPS040N03LG , IPS050N03LG , IPS060N03LG , IPS075N03LG , IRF830 , IPS105N03LG , IPS110N12N3G , IPS118N10NG , IPS12CN10LG , IPS135N03LG , IPS50R520CP , IPU039N03LG , IPU050N03LG .
History: AP3NR85CMT | VBJ1201K | UTM4052G-TN4-R | SVS7N60DD2TR | SM4831NAK | SM4832NSK | P3606BEA
Keywords - IPS090N03LG MOSFET datasheet
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History: AP3NR85CMT | VBJ1201K | UTM4052G-TN4-R | SVS7N60DD2TR | SM4831NAK | SM4832NSK | P3606BEA



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