IPS090N03LG Specs and Replacement

Type Designator: IPS090N03LG

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 42 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 40 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 3 nS

Cossⓘ - Output Capacitance: 500 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.009 Ohm

Package: TO251

IPS090N03LG substitution

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IPS090N03LG datasheet

 ..1. Size:538K  1
 ipd090n03lg ipf090n03lg ips090n03lg ipu090n03lg.pdf pdf_icon

IPS090N03LG

Type IPD090N03L G IPF090N03L G IPS090N03L G IPU090N03L G OptiMOS 3 Power-Transistor Product Summary Features V 30 V DS Fast switching MOSFET for SMPS R 9 m DS(on),max Optimized technology for DC/DC converters I 40 A D Qualified according to JEDEC1) for target applications N-channel, logic level Excellent gate charge x R product (FOM) DS(on) Very low... See More ⇒

 4.1. Size:1344K  infineon
 ips090n03l.pdf pdf_icon

IPS090N03LG

pe % # ! % # ! %' # ! %) # ! % (>.;?6?@ %>E Features D S !4EF EI... See More ⇒

 9.1. Size:413K  infineon
 ipd09n03la ipf09n03la ips09n03la ipu09n03la.pdf pdf_icon

IPS090N03LG

IPD09N03LA IPF09N03LA IPS09N03LA IPU09N03LA OptiMOS 2 Power-Transistor Product Summary Features V 25 V DS Ideal for high-frequency dc/dc converters R (SMD version) 8.6 m DS(on),max Qualified according to JEDEC1) for target application I 50 A D N-channel, logic level Excellent gate charge x R product (FOM) DS(on) Superior thermal resistance 175 C ... See More ⇒

Detailed specifications: IPP90R340C3, IPP90R500C3, IPP90R800C3, IPS031N03LG, IPS040N03LG, IPS050N03LG, IPS060N03LG, IPS075N03LG, 2N60, IPS105N03LG, IPS110N12N3G, IPS118N10NG, IPS12CN10LG, IPS135N03LG, IPS50R520CP, IPU039N03LG, IPU050N03LG

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