All MOSFET. IPU135N03LG Datasheet

 

IPU135N03LG MOSFET. Datasheet pdf. Equivalent


   Type Designator: IPU135N03LG
   Marking Code: 135N03L
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 31 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.2 V
   |Id|ⓘ - Maximum Drain Current: 30 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 4.8 nC
   trⓘ - Rise Time: 3 nS
   Cossⓘ - Output Capacitance: 350 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0135 Ohm
   Package: TO251

 IPU135N03LG Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IPU135N03LG Datasheet (PDF)

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Type IPD135N03L G IPF135N03L GIPS135N03L G IPU135N03L GOptiMOS3 Power-TransistorProduct SummaryFeaturesV 30 VDS Fast switching MOSFET for SMPSR 13.5mDS(on),max Optimized technology for DC/DC convertersI 30 AD Qualified according to JEDEC1) for target applications N-channel, logic level Excellent gate charge x R product (FOM)DS(on) Very

 4.2. Size:260K  inchange semiconductor
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IPU135N03LG IPU135N03LG

isc N-Channel MOSFET Transistor IPU135N03LFEATURESWith TO-251(IPAK) packagingHigh speed switchingEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplyDC-DC convertersMotor controlSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE

 6.1. Size:597K  infineon
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IPU135N03LG IPU135N03LG

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