All MOSFET. IPW60R070C6 Datasheet

 

IPW60R070C6 Datasheet and Replacement


   Type Designator: IPW60R070C6
   Marking Code: 6R070C6
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 391 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.5 V
   |Id| ⓘ - Maximum Drain Current: 53 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 170 nC
   tr ⓘ - Rise Time: 12 nS
   Cossⓘ - Output Capacitance: 215 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.07 Ohm
   Package: TO247
 

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IPW60R070C6 Datasheet (PDF)

 ..1. Size:708K  infineon
 ipw60r070c6 v2.1a .pdf pdf_icon

IPW60R070C6

MOSFET*

 ..2. Size:239K  inchange semiconductor
 ipw60r070c6.pdf pdf_icon

IPW60R070C6

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IPW60R070C6IIPW60R070C6FEATURESStatic drain-source on-resistance:RDS(on)70mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFast switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Sou

 4.1. Size:1384K  infineon
 ipw60r070cfd7.pdf pdf_icon

IPW60R070C6

IPW60R070CFD7MOSFETPG-TO 247-3600V CoolMOS CFD7 Power TransistorCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle andpioneered by Infineon Technologies. The latest CoolMOS CFD7 is thesuccessor to the CoolMOS CFD2 series and is an optimized platformtailored to target soft switching applications s

 4.2. Size:243K  inchange semiconductor
 ipw60r070cfd7.pdf pdf_icon

IPW60R070C6

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IPW60R070CFD7IIPW60R070CFD7FEATURESStatic drain-source on-resistance:RDS(on)70mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFast switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain

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History: TT8M1 | PK650DY | SVF2N65MJ | AP2304GN | MCH3479

Keywords - IPW60R070C6 MOSFET datasheet

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