IPW60R099C6 Datasheet and Replacement

MOSFET+ =L9D - PA

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS C6600V CoolMOS C6 Power TransistorIPx60R099C6 Data SheetRev. 2.1, 2010-02-09Final Industrial & Multimarket600V CoolMOS C6 Power Transistor IPA60R099C6, IPB60R099C6IPP60R099C6 IPW60R099C61 DescriptionCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the supe

IPW60R099CPACoolMOSTM Power TransistorProduct SummaryV 600 VDSR 0.105DS(on),maxQ 60 nCg,typFeatures Lowest figure-of-merit RON x Qg Ultra low gate charge Extreme dv/dt ratedPG-TO247-3 High peak current capability Automotive AEC Q101 qualified Green package (RoHS compliant)CoolMOS CPA is specially designed for: DC/DC converters for Aut

IPW60R099CPTMCIMOSTM #:A0INV . J6A>;>:9 688DG9>CC6CIPGTO247 1V 2 AIG6 ADL

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS C7600V CoolMOS C7 Power TransistorIPW60R099C7Data SheetRev. 2.0FinalPower Management & Multimarket600V CoolMOS C7 Power TransistorIPW60R099C7TO-2471 DescriptionCoolMOS C7 is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle andp

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IPW60R099CPIIPW60R099CPFEATURESStatic drain-source on-resistance:RDS(on)99mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONHigh Peak Current CapabilityABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNI

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IPW60R099C7IIPW60R099C7FEATURESStatic drain-source on-resistance:RDS(on)99mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSuitable for hard and soft switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER V