IPW60R125C6 Datasheet and Replacement
Type Designator: IPW60R125C6
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 219 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 30 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 12 nS
Cossⓘ - Output Capacitance: 125 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.125 Ohm
Package: TO247
IPW60R125C6 substitution
IPW60R125C6 Datasheet (PDF)
ipa60r125c6 ipb60r125c6 ipp60r125c6 ipw60r125c6.pdf

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS C6 600V600V CoolMOS C6 Power TransistorIPx60R125C6Data SheetRev. 2.3FinalPower Management & Multimarket600V CIMOS C6 Pwer Transistr IPA60R125C6, IPB60R125C6IPP60R125C6 IPW60R125C61 DescriptinCoolMOS is a revolutionary technology for high voltage powerMOSFETs designed according to the superj
ipw60r125c6.pdf

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IPW60R125C6IIPW60R125C6FEATURESStatic drain-source on-resistance:RDS(on)125mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFast switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-So
ipw60r125cfd7.pdf

IPW60R125CFD7MOSFETPG-TO 247-3600V CoolMOS CFD7 Power TransistorCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle andpioneered by Infineon Technologies. The latest CoolMOS CFD7 is thesuccessor to the CoolMOS CFD2 series and is an optimized platformtailored to target soft switching applications s
ipw60r125cp.pdf

IPW60R125CPCIMOS #:A0:9 688DG9>CC6CIPGTO247 1 ::7!"% # 4= =;0.4,77C /0=4290/ 1:I8
Datasheet: IPW60R045CP , IPW60R045CPA , IPW60R070C6 , IPW60R075CP , IPW60R075CPA , IPW60R099C6 , IPW60R099CP , IPW60R099CPA , 20N60 , IPW60R125CP , IPW60R160C6 , IPW60R165CP , IPW60R190C6 , IPW60R190E6 , IPW60R199CP , IPW60R250CP , IPW60R280C6 .
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