IPW60R299CP MOSFET. Datasheet pdf. Equivalent
Type Designator: IPW60R299CP
Marking Code: 6R299P
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 96 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.5 V
|Id|ⓘ - Maximum Drain Current: 11 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 22 nC
trⓘ - Rise Time: 5 nS
Cossⓘ - Output Capacitance: 60 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.299 Ohm
Package: TO247
IPW60R299CP Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IPW60R299CP Datasheet (PDF)
ipw60r299cp.pdf
IPW60R299CPCIMOS #:A0:9 688DG9>CC6CIPGTO247 ::7!"% # 4= =;0.4,77C /0=4290/ 1:I8=
ipw60r299cp.pdf
isc N-Channel MOSFET Transistor IPW60R299CPIIPW60R299CPFEATURESStatic drain-source on-resistance:RDS(on)299mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONHigh peak current capabilityABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Volta
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ipa60r230p6 ipp60r230p6 ipw60r230p6.pdf
MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS P6600V CoolMOS P6 Power TransistorIPx60R230P6Data SheetRev. 2.1FinalPower Management & Multimarket600V CoolMOS P6 Power TransistorIPW60R230P6, IPP60R230P6, IPA60R230P6TO-247 TO-220 TO-220 FP1 DescriptiontabCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed accordi
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ipw60r250cp.pdf
IPW60R250CPTMCIMOSTM #:A0:9 688DG9>CC6CI ::7!"% # 4= /0=4290/ 1:I8=>C
ipw60r230p6 ipb60r230p6 ipp60r230p6 ipa60r230p6.pdf
MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS P6600V CoolMOS P6 Power TransistorIPx60R230P6Data SheetRev. 2.2FinalPower Management & Multimarket600V CoolMOS P6 Power TransistorIPW60R230P6, IPB60R230P6, IPP60R230P6,IPA60R230P6TO-247 DPAK TO-2201 DescriptiontabtabCoolMOS is a revolutionary technology for high voltage powerMOSFETs,
ipw60r280p6 ipb60r280p6 ipp60r280p6 ipa60r280p6.pdf
MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS P6600V CoolMOS P6 Power TransistorIPx60R280P6Data SheetRev. 2.2FinalPower Management & Multimarket600V CoolMOS P6 Power TransistorIPW60R280P6, IPB60R280P6, IPP60R280P6,IPA60R280P6TO-247 DPAK TO-2201 DescriptiontabtabCoolMOS is a revolutionary technology for high voltage powerMOSFETs,
ipw60r280e6 2.0.pdf
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ipw60r280e6.pdf
isc N-Channel MOSFET Transistor IPW60R280E6IIPW60R280E6FEATURESStatic drain-source on-resistance:RDS(on) 0.28Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONProvide all benefits of a fast switching SJ MOSFET while notsacrificing ease of useABSOL
ipw60r280c6.pdf
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ipw60r250cp.pdf
isc N-Channel MOSFET Transistor IPW60R250CPIIPW60R250CPFEATURESStatic drain-source on-resistance:RDS(on)250mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONHigh peak current capabilityABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Volta
ipw60r280p6.pdf
INCHANGE Semiconductorisc N-Channel MOSFET Transistor IPW60R280P6IIPW60R280P6FEATURESStatic drain-source on-resistance:RDS(on)280mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFast switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-So
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
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