All MOSFET. IPW60R299CP Datasheet

 

IPW60R299CP MOSFET. Datasheet pdf. Equivalent


   Type Designator: IPW60R299CP
   Marking Code: 6R299P
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 96 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.5 V
   |Id|ⓘ - Maximum Drain Current: 11 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 22 nC
   trⓘ - Rise Time: 5 nS
   Cossⓘ - Output Capacitance: 60 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.299 Ohm
   Package: TO247

 IPW60R299CP Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IPW60R299CP Datasheet (PDF)

 ..1. Size:653K  infineon
ipw60r299cp.pdf

IPW60R299CP
IPW60R299CP

IPW60R299CPCIMOS #:A0:9 688DG9>CC6CIPGTO247 ::7!"% # 4= =;0.4,77C /0=4290/ 1:I8=

 ..2. Size:242K  inchange semiconductor
ipw60r299cp.pdf

IPW60R299CP
IPW60R299CP

isc N-Channel MOSFET Transistor IPW60R299CPIIPW60R299CPFEATURESStatic drain-source on-resistance:RDS(on)299mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONHigh peak current capabilityABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Volta

 7.1. Size:2632K  infineon
ipb60r230p6 ipw60r230p6 ipb60r230p6 ipp60r230p6 ipa60r230p6.pdf

IPW60R299CP
IPW60R299CP

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS P6600V CoolMOS P6 Power TransistorIPx60R230P6Data SheetRev. 2.2FinalPower Management & Multimarket600V CoolMOS P6 Power TransistorIPW60R230P6, IPB60R230P6, IPP60R230P6,IPA60R230P6TO-247 DPAK TO-2201 DescriptiontabtabCoolMOS is a revolutionary technology for high voltage powerMOSFETs,

 7.2. Size:2865K  infineon
ipa60r280p6 ipp60r280p6 ipw60r280p6.pdf

IPW60R299CP
IPW60R299CP

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS P6600V CoolMOS P6 Power TransistorIPx60R280P6Data SheetRev. 2.1FinalPower Management & Multimarket600V CoolMOS P6 Power TransistorIPW60R280P6, IPP60R280P6, IPA60R280P6TO-247 TO-220 TO-220 FP1 DescriptiontabCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed accordi

 7.3. Size:2886K  infineon
ipa60r230p6 ipp60r230p6 ipw60r230p6.pdf

IPW60R299CP
IPW60R299CP

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS P6600V CoolMOS P6 Power TransistorIPx60R230P6Data SheetRev. 2.1FinalPower Management & Multimarket600V CoolMOS P6 Power TransistorIPW60R230P6, IPP60R230P6, IPA60R230P6TO-247 TO-220 TO-220 FP1 DescriptiontabCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed accordi

 7.4. Size:1432K  infineon
ipw60r280c6.pdf

IPW60R299CP
IPW60R299CP

MOSFET+ =L9D - PA

 7.5. Size:1012K  infineon
ipp60r280e6 ipa60r280e6 ipw60r280e6.pdf

IPW60R299CP
IPW60R299CP

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS E6 600V600V CoolMOS E6 Power TransistorIPx60R280E6Data SheetRev. 2.3FinalPower Management & Multimarket600V CoolMOS E6 Power Transistor IPP60R280E6, IPA60R280E6IPW60R280E61 DescriptionCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) pri

 7.6. Size:530K  infineon
ipw60r250cp.pdf

IPW60R299CP
IPW60R299CP

IPW60R250CPTMCIMOSTM #:A0:9 688DG9>CC6CI ::7!"% # 4= /0=4290/ 1:I8=>C

 7.7. Size:3109K  infineon
ipw60r230p6 ipb60r230p6 ipp60r230p6 ipa60r230p6.pdf

IPW60R299CP
IPW60R299CP

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS P6600V CoolMOS P6 Power TransistorIPx60R230P6Data SheetRev. 2.2FinalPower Management & Multimarket600V CoolMOS P6 Power TransistorIPW60R230P6, IPB60R230P6, IPP60R230P6,IPA60R230P6TO-247 DPAK TO-2201 DescriptiontabtabCoolMOS is a revolutionary technology for high voltage powerMOSFETs,

 7.8. Size:2621K  infineon
ipw60r280p6 ipb60r280p6 ipp60r280p6 ipa60r280p6.pdf

IPW60R299CP
IPW60R299CP

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS P6600V CoolMOS P6 Power TransistorIPx60R280P6Data SheetRev. 2.2FinalPower Management & Multimarket600V CoolMOS P6 Power TransistorIPW60R280P6, IPB60R280P6, IPP60R280P6,IPA60R280P6TO-247 DPAK TO-2201 DescriptiontabtabCoolMOS is a revolutionary technology for high voltage powerMOSFETs,

 7.9. Size:1975K  infineon
ipw60r280e6 2.0.pdf

IPW60R299CP
IPW60R299CP

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS E6600V CoolMOS E6 Power TransistorIPx60R280E6Data SheetRev. 2.0, 2010-04-09FinalIndustrial & Multimarket600V CoolMOS E6 Power Transistor IPP60R280E6, IPA60R280E6IPW60R280E61 DescriptionCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ)

 7.10. Size:1587K  infineon
ipa60r280c6 ipb60r280c6 ipi60r280c6 ipp60r280c6 ipw60r280c6.pdf

IPW60R299CP
IPW60R299CP

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS C6 600V600V CoolMOS C6 Power TransistorIPx60R280C6Data SheetRev. 2.2FinalPower Management & Multimarket600V CIMOS C6 Pwer Transistr IPA60R280C6, IPB60R280C6IPI60R280C6, IPP60R280C6IPW60R280C61 DescriptinCoolMOS is a revolutionary technology for high voltage powerMOSFETs designed according

 7.11. Size:245K  inchange semiconductor
ipw60r280e6.pdf

IPW60R299CP
IPW60R299CP

isc N-Channel MOSFET Transistor IPW60R280E6IIPW60R280E6FEATURESStatic drain-source on-resistance:RDS(on) 0.28Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONProvide all benefits of a fast switching SJ MOSFET while notsacrificing ease of useABSOL

 7.12. Size:242K  inchange semiconductor
ipw60r280c6.pdf

IPW60R299CP
IPW60R299CP

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IPW60R280C6IIPW60R280C6FEATURESStatic drain-source on-resistance:RDS(on)280mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFast switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-So

 7.13. Size:242K  inchange semiconductor
ipw60r250cp.pdf

IPW60R299CP
IPW60R299CP

isc N-Channel MOSFET Transistor IPW60R250CPIIPW60R250CPFEATURESStatic drain-source on-resistance:RDS(on)250mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONHigh peak current capabilityABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Volta

 7.14. Size:243K  inchange semiconductor
ipw60r280p6.pdf

IPW60R299CP
IPW60R299CP

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IPW60R280P6IIPW60R280P6FEATURESStatic drain-source on-resistance:RDS(on)280mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFast switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-So

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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