IPW65R280C6 Specs and Replacement

Type Designator: IPW65R280C6

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 104 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 13.8 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 11 nS

Cossⓘ - Output Capacitance: 60 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.28 Ohm

Package: TO247

IPW65R280C6 substitution

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IPW65R280C6 datasheet

 ..1. Size:1337K  infineon
ipa65r280c6 ipb65r280c6 ipi65r280c6 ipp65r280c6 ipw65r280c6.pdf pdf_icon

IPW65R280C6

MO Met l Oxi e emi n t iel e t n i t C lMO C6 65 C lMO C6 e n i t I x65 280C6 D t eet Rev. 2.1 in l e M n ement & M ltim ket , == $&)G '=D3? *?/... See More ⇒

 ..2. Size:2104K  infineon
ipw65r280c6.pdf pdf_icon

IPW65R280C6

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 ..3. Size:242K  inchange semiconductor
ipw65r280c6.pdf pdf_icon

IPW65R280C6

isc N-Channel MOSFET Transistor IPW65R280C6 IIPW65R280C6 FEATURES Static drain-source on-resistance RDS(on) 280m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Fast Switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 650 V DSS ... See More ⇒

 5.1. Size:1885K  infineon
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IPW65R280C6

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Detailed specifications: IPW60R190E6, IPW60R199CP, IPW60R250CP, IPW60R280C6, IPW60R280E6, IPW60R299CP, IPW65R070C6, IPW65R080CFD, IRFB4227, IPW65R280E6, IPW65R660CFD, IPW90R120C3, IPW90R1K0C3, IPW90R1K2C3, IPW90R340C3, IPW90R500C3, IPW90R800C3

Keywords - IPW65R280C6 MOSFET specs

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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs