IPW65R660CFD Specs and Replacement
Type Designator: IPW65R660CFD
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 62.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 6 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 8 nS
Cossⓘ - Output Capacitance: 33 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.66 Ohm
Package: TO247
IPW65R660CFD substitution
- MOSFET ⓘ Cross-Reference Search
IPW65R660CFD datasheet
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MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS CFD2 650V 650V CoolMOS CFD2 Power Transistor IPx65R660CFD Data Sheet Rev. 2.4 Final Industrial & Multimarket 650V CoolMOS CFD2 Power Transistor IPW65R660CFD, IPB65R660CFD, IPP65R660CFD IPA65R660CFD, IPD65R660CFD, IPI65R660CFD TO-247 D PAK TO-220 1 Description CoolMOS is a revolutionary technology for hi... See More ⇒
ipw65r660cfd.pdf
isc N-Channel MOSFET Transistor IPW65R660CFD IIPW65R660CFD FEATURES Static drain-source on-resistance RDS(on) 660m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Fast Switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 650 V DS... See More ⇒
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ipw65r080cfd.pdf
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ipw65r065c7.pdf
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ipw65r095c7.pdf
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MO Met l Oxi e emi n t iel e t n i t C lMO C D C lMO C D e n i t I x 4 C D D t eet e 4 Rev. 2.6 in l Power Management & Multimarket In ti l & M ltim ket C lMO C D e n i t I 4 C D I 4 C D I 4 C D I 4 C D I D 4 C D I I 4 C D O 47 D O 1 Descripti n C lMO i e l ti n te n l i lt e p e MO e i ne in t t e pej n ti n ) pin i... See More ⇒
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MOSFET Metal Oxide Semiconductor Field Effect Transistor CFDA Automotive 650V CoolMOS CFDA Power Transistor IPW65R048CFDA Data Sheet Rev. 2.0 Final Automotive 650V CoolMOS CFDA Power Transistor IPW65R048CFDA TO-247 1 Description CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by ... See More ⇒
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MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS E6 650V CoolMOS E6 Power Transistor IPx65R190E6 Data Sheet Rev. 2.0, 2011-05-13 Final Industrial & Multimarket 650V CoolMOS E6 Power Transistor IPA65R190E6, IPB65R190E6 IPI65R190E6, IPP65R190E6 IPW65R190E6 1 Description CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed accordi... See More ⇒
ipw65r190c7.pdf
isc N-Channel MOSFET Transistor IPW65R190C7 IIPW65R190C7 FEATURES Static drain-source on-resistance RDS(on) 190m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Fast Switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 650 V DSS ... See More ⇒
ipw65r190cfd.pdf
isc N-Channel MOSFET Transistor IPW65R190CFD IIPW65R190CFD FEATURES Static drain-source on-resistance RDS(on) 190m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Fast Switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 650 V DS... See More ⇒
ipw65r190e6.pdf
isc N-Channel MOSFET Transistor IPW65R190E6 IIPW65R190E6 FEATURES Static drain-source on-resistance RDS(on) 190m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Fast Switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 650 V DSS ... See More ⇒
ipw65r150cfd.pdf
isc N-Channel MOSFET Transistor IPW65R150CFD IIPW65R150CFD FEATURES Static drain-source on-resistance RDS(on) 150m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Fast Switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 650 V DS... See More ⇒
ipw65r310cfd.pdf
isc N-Channel MOSFET Transistor IPW65R310CFD IIPW65R310CFD FEATURES Static drain-source on-resistance RDS(on) 310m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Fast Switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 650 V DS... See More ⇒
ipw65r420cfd.pdf
isc N-Channel MOSFET Transistor IPW65R420CFD IIPW65R420CFD FEATURES Static drain-source on-resistance RDS(on) 420m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Fast Switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 650 V DS... See More ⇒
ipw65r280e6.pdf
isc N-Channel MOSFET Transistor IPW65R280E6 IIPW65R280E6 FEATURES Static drain-source on-resistance RDS(on) 280m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Fast Switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 650 V DSS ... See More ⇒
ipw65r037c6.pdf
isc N-Channel MOSFET Transistor IPW65R037C6 IIPW65R037C6 FEATURES Static drain-source on-resistance RDS(on) 37m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Fast Switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 650 V DSS ... See More ⇒
ipw65r080cfd.pdf
isc N-Channel MOSFET Transistor IPW65R080CFD IIPW65R080CFD FEATURES Static drain-source on-resistance RDS(on) 80m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Fast Switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 650 V DSS... See More ⇒
ipw65r099c6.pdf
isc N-Channel MOSFET Transistor IPW65R099C6 IIPW65R099C6 FEATURES Static drain-source on-resistance RDS(on) 99m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Fast Switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 650 V DSS ... See More ⇒
ipw65r110cfd.pdf
isc N-Channel MOSFET Transistor IPW65R110CFD IIPW65R110CFD FEATURES Static drain-source on-resistance RDS(on) 110m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Suitable for resonant Switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source ... See More ⇒
ipw65r280c6.pdf
isc N-Channel MOSFET Transistor IPW65R280C6 IIPW65R280C6 FEATURES Static drain-source on-resistance RDS(on) 280m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Fast Switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 650 V DSS ... See More ⇒
ipw65r070c6.pdf
isc N-Channel MOSFET Transistor IPW65R070C6 IIPW65R070C6 FEATURES Static drain-source on-resistance RDS(on) 70m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Fast Switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 650 V DSS ... See More ⇒
ipw65r041cfd.pdf
isc N-Channel MOSFET Transistor IPW65R041CFD IIPW65R041CFD FEATURES Static drain-source on-resistance RDS(on) 41m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Fast Switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 650 V DSS... See More ⇒
ipw65r045c7.pdf
isc N-Channel MOSFET Transistor IPW65R045C7 IIPW65R045C7 FEATURES Static drain-source on-resistance RDS(on) 45m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Fast Switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 650 V DSS ... See More ⇒
ipw65r065c7.pdf
isc N-Channel MOSFET Transistor IPW65R065C7 IIPW65R065C7 FEATURES Static drain-source on-resistance RDS(on) 65m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Fast Switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 650 V DSS ... See More ⇒
ipw65r095c7.pdf
isc N-Channel MOSFET Transistor IPW65R095C7 IIPW65R095C7 FEATURES Static drain-source on-resistance RDS(on) 95m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Fast Switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 650 V DSS ... See More ⇒
ipw65r125c7.pdf
isc N-Channel MOSFET Transistor IPW65R125C7 IIPW65R125C7 FEATURES Static drain-source on-resistance RDS(on) 125m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Fast Switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 650 V DSS ... See More ⇒
ipw65r048cfda.pdf
isc N-Channel MOSFET Transistor IPW65R048CFDA FEATURES Drain Current I = 63.3A@ T =25 D C Drain Source Voltage V = 650V(Min) DSS Static Drain-Source On-Resistance R = 0.048 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch a... See More ⇒
Detailed specifications: IPW60R250CP, IPW60R280C6, IPW60R280E6, IPW60R299CP, IPW65R070C6, IPW65R080CFD, IPW65R280C6, IPW65R280E6, 10N60, IPW90R120C3, IPW90R1K0C3, IPW90R1K2C3, IPW90R340C3, IPW90R500C3, IPW90R800C3, SPA02N80C3, SPA03N60C3
Keywords - IPW65R660CFD MOSFET specs
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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
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