SPA07N60CFD MOSFET Datasheet: N-Ch, 600V, 6.6A. Full specification with pinout and replacement list

SPA07N60CFD Specs and Replacement

Type Designator: SPA07N60CFD

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 32 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 6.6 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 25 nS

Cossⓘ - Output Capacitance: 260 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.7 Ohm

Package: TO220FP

SPA07N60CFD substitution

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SPA07N60CFD datasheet

..1. Size:586K infineon
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SPA07N60CFD C IMOSTM $;B1= '=- >5>?;= $=;0@/? &@99-=D Features V 1jmax 650 V DS V &CIG>CH>8 ;6HI G 8DK GN 7D9N 9>D9 R 0.7 DS(on) max V "MIG B AN ADL G K GH G 8DK GN 8=6G;> 9 for industrial grade applications 688DG9>C53 10 2;= V 0D;I HL>I8=>C... See More ⇒

..2. Size:201K inchange semiconductor
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INCHANGE Semiconductor Isc N-Channel MOSFET Transistor SPA07N60CFD FEATURES With TO-220F package Low input capacitance and gate charge Low gate input resistance Reduced switching and conduction losses 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATING... See More ⇒

5.1. Size:702K infineon
spp07n60c3 spi07n60c3 spa07n60c3.pdf pdf_icon

SPP07N60C3 SPI07N60C3, SPA07N60C3 Cool MOS Power Transistor VDS @ Tjmax 650 V Feature RDS(on) 0.6 New revolutionary high voltage technology ID 7.3 A Ultra low gate charge PG-TO220FP PG-TO262 PG-TO220 Periodic avalanche rated 2 Extreme dv/dt rated 3 High peak current capability 2 3 2 1 1 P-TO220-3-31 Improved transconductance P-TO220-3-1 P... See More ⇒

5.2. Size:620K infineon
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