SPB02N60S5 Datasheet and Replacement. Cross Reference Search

SPB02N60S5 Datasheet (PDF)

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SPB02N60S5Cool MOS Power TransistorVDS600 VFeatureRDS(on) 3 New revolutionary high voltage technologyID 1.8 A Ultra low gate chargePG-TO263 Periodic avalanche rated Extreme dv/dt rated Ultra low effective capacitances Improved transconductanceType Package Ordering Code MarkingSPB02N60S5 PG-TO263 Q67040-S4212 02N60S5Maximum RatingsParame

..2. Size:257K inchange semiconductor
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Isc N-Channel MOSFET Transistor SPB02N60S5FEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Vo

6.1. Size:545K infineon
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VDS Tjmax G G

6.2. Size:258K inchange semiconductor
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Isc N-Channel MOSFET Transistor SPB02N60C3FEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Vo

Datasheet: SPA16N50C3 , SPA17N80C3 , SPA20N60C3 , SPA20N60CFD , SPA20N65C3 , SPA21N50C3 , SPB80N06S-08 , SPB02N60C3 , 20N50 , SPB03N60C3 , SPB03N60S5 , SPB04N50C3 , SPB04N60C3 , SPB04N60S5 , SPB07N60C3 , SPB07N60S5 , SPB08P06PG .