All MOSFET. SPB80P06PG Datasheet

 

SPB80P06PG MOSFET. Datasheet pdf. Equivalent

Type Designator: SPB80P06PG

Type of Transistor: MOSFET

Type of Control Channel: P -Channel

Maximum Power Dissipation (Pd): 340 W

Maximum Drain-Source Voltage |Vds|: 60 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 80 A

Maximum Junction Temperature (Tj): 175 °C

Total Gate Charge (Qg): 115 nC

Rise Time (tr): 18 nS

Drain-Source Capacitance (Cd): 1252 pF

Maximum Drain-Source On-State Resistance (Rds): 0.023 Ohm

Package: TO263

SPB80P06PG Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SPB80P06PG Datasheet (PDF)

0.1. spb80p06pg spp80p06pg.pdf Size:387K _1

SPB80P06PG
SPB80P06PG

SPP80P06P G SPB80P06P G SIPMOS Power-Transistor Features Product Summary P-Channel Drain source voltage VDS -60 V Enhancement mode Drain-source on-state resistance RDS(on) 0.023 Avalanche rated Continuous drain current ID -80 A dv/dt rated 175°C operating temperature Pin 1 PIN 2/4 PIN 3 Type Package Lead free G D S SPP80P06P G PG-TO220-3 Yes PG-TO263-3 SPB80P06P G

0.2. spb80p06pg.pdf Size:588K _infineon

SPB80P06PG
SPB80P06PG

SPB80P06P G SIPMOS Power-Transistor Features Product Summary P-Channel Drain source voltage VDS -60 V Enhancement mode Drain-source on-state resistance RDS(on) 0.023 Avalanche rated Continuous drain current ID -80 A dv/dt rated 175°C operating temperature ° Pb-free lead plating: RoHS compliant ° Halogen-free according to IEC61249-2-21 Pin 1 PIN 2/4 PIN 3 Type Packag

 9.1. spi80n06s-08 spp80n06s-08 spb80n06s-08.pdf Size:208K _1

SPB80P06PG
SPB80P06PG

SPB80N06S-08 SPI80N06S-08, SPP80N06S-08 SIPMOS® Power-Transistor Product Summary Features V 55 V DS • N-channel - Normal Level -Enhancement mode R (SMD version) 7.7 mΩ DS(on),max • Automotive AEC Q101 qualified I 80 A D • MSL1 up to 260°C peak reflow • 175°C operating temperature Green Package PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 • Avalanche test • Repetive

9.2. spb80n10lg.pdf Size:892K _infineon

SPB80P06PG
SPB80P06PG

SPB80N10L SIPMOSTMPower-Transistor Product Summary Feature VDS S 2Hmfssjq R Ž Jsmfshjrjsy rtij I Qtlnh Qj{jq 6<:´H tujwfynsl yjrujwfyzwj F{fqfshmj wfyji ivP…t wfyji@ Mfqtljs2kwjj fhhtwinsl yt NJH;679>27276 Marking Type Package XUG=5S 65Q Maximum Ratings1 fy Tj B 7: ´H1 zsqjxx tymjw|nxj xujhnknji Parameter Symbol Value Unit

 9.3. spp80n06s2l-07 spb80n06s2l-07.pdf Size:308K _infineon

SPB80P06PG
SPB80P06PG

SPP80N06S2L-07 SPB80N06S2L-07 OptiMOS Power-Transistor Product Summary Feature VDS 55 V • N-Channel RDS(on) 7 mΩ • Enhancement mode ID 80 A • Logic Level P- TO263 -3-2 P- TO220 -3-1 • 175°C operating temperature • Avalanche rated • dv/dt rated Type Package Ordering Code Marking SPP80N06S2L-07 P- TO220 -3-1 Q67040-S4285 2N06L07 SPB80N06S2L-07 P- TO263 -3-2 Q6

9.4. spi80n03s2-03 spp80n03s2-03 spb80n03s2-03.pdf Size:456K _infineon

SPB80P06PG
SPB80P06PG

www.DataSheet4U.com SPI80N03S2-03 SPP80N03S2-03,SPB80N03S2-03 OptiMOS Power-Transistor Product Summary Feature VDS 30 V • N-Channel RDS(on) max. SMD version 3.1 mΩ • Enhancement mode ID 80 A • Excellent Gate Charge x RDS(on) product (FOM) P- TO262 -3-1 P- TO263 -3-2 P- TO220 -3-1 • Superior thermal resistance • 175°C operating temperature • Avalanche rated •

 9.5. spp80n08s2l spb80n08s2l.pdf Size:314K _infineon

SPB80P06PG
SPB80P06PG

SPP80N08S2L-07 SPB80N08S2L-07 OptiMOS Power-Transistor Product Summary Feature VDS 75 V • N-Channel RDS(on) max. SMD version 6.8 mΩ • Enhancement mode ID 80 A • Logic Level P- TO263 -3-2 P- TO220 -3-1 • 175°C operating temperature • Avalanche rated • dv/dt rated Type Package Ordering Code Marking SPP80N08S2L-07 P- TO220 -3-1 Q67060-S6015 2N08L07 SPB80N08S2L-

9.6. spb80n06s2-09 spp80n06s2-09.pdf Size:516K _infineon

SPB80P06PG
SPB80P06PG

SPP80N06S2-09 Preliminary data SPB80N06S2-09 OptiMOS =Power-Transistor = == Product Summary Feature VDS 55 V N-Channel RDS(on) 9.1 m Enhancement mode ID 80 A 175°C operating temperature P-TO263-3-2 P-TO220-3-1 Avalanche rated dv/dt rated Type Package Ordering Code Marking SPP80N06S2-09 P-TO220-3-1 Q67060-S6025 2N0609 SPB80N06S2-09 P-TO263-3-2 Q67060-S6027 2N0609 Maxi

9.7. spp80n06s2l-09 spb80n06s2l-09.pdf Size:311K _infineon

SPB80P06PG
SPB80P06PG

SPP80N06S2L-09 SPB80N06S2L-09 OptiMOS Power-Transistor Product Summary Feature VDS 55 V • N-Channel RDS(on) 8.5 mΩ • Enhancement mode ID 80 A • Logic Level P- TO263 -3-2 P- TO220 -3-1 • 175°C operating temperature • Avalanche rated • dv/dt rated Type Package Ordering Code Marking SPP80N06S2L-09 P- TO220 -3-1 Q67060-S6031 2N06L09 SPB80N06S2L-09 P- TO263 -3-2

9.8. spp80n06s2-05 spb80n06s2-05.pdf Size:345K _infineon

SPB80P06PG
SPB80P06PG

www.DataSheet4U.com SPP80N06S2-05 SPB80N06S2-05 OptiMOS Power-Transistor Product Summary Feature VDS 55 V • N-Channel RDS(on) max. SMD version 4.8 mΩ • Enhancement mode ID 80 A • 175°C operating temperature P- TO263 -3-2 P- TO220 -3-1 • Avalanche rated • dv/dt rated Type Package Ordering Code Marking SPP80N06S2-05 P- TO220 -3-1 Q67040-S4245 2N0605 SPB80N06S2-05

9.9. spb80n03s2.pdf Size:416K _infineon

SPB80P06PG
SPB80P06PG

SPI80N03S2-03 SPP80N03S2-03,SPB80N03S2-03 OptiMOS Power-Transistor Product Summary Feature VDS 30 V • N-Channel RDS(on) max. SMD version 3.1 mΩ • Enhancement mode ID 80 A • Excellent Gate Charge x RDS(on) product (FOM) P- TO262 -3-1 P- TO263 -3-2 P- TO220 -3-1 • Superior thermal resistance • 175°C operating temperature • Avalanche rated • dv/dt rated Type Pa

9.10. spp80n06s spb80n06s spi80n06s-08green.pdf Size:205K _infineon

SPB80P06PG
SPB80P06PG

SPB80N06S-08 SPI80N06S-08, SPP80N06S-08 SIPMOS® Power-Transistor Product Summary Features V 55 V DS • N-channel - Normal Level -Enhancement mode R (SMD version) 7.7 mΩ DS(on),max • Automotive AEC Q101 qualified I 80 A D • MSL1 up to 260°C peak reflow • 175°C operating temperature Green Package PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 • Avalanche test • Repetive

9.11. spp80n06s2-08 spb80n06s2-08 spi80n06s2-08.pdf Size:419K _infineon

SPB80P06PG
SPB80P06PG

SPI80N06S2-08 SPP80N06S2-08,SPB80N06S2-08 OptiMOS Power-Transistor Product Summary Feature VDS 55 V • N-Channel RDS(on) 8 mΩ • Enhancement mode ID 80 A • 175°C operating temperature P- TO262 -3-1 P- TO263 -3-2 P- TO220 -3-1 • Avalanche rated • dv/dt rated Type Package Ordering Code Marking SPP80N06S2-08 P- TO220 -3-1 Q67060-S4283 2N0608 SPB80N06S2-08 P- TO263 -

9.12. spp80n06s2l-h5 spb80n06s2l-h5.pdf Size:311K _infineon

SPB80P06PG
SPB80P06PG

SPP80N06S2L-H5 SPB80N06S2L-H5 OptiMOS Power-Transistor Product Summary Feature VDS 55 V • N-Channel RDS(on) 5 mΩ • Enhancement mode ID 80 A • 175°C operating temperature P- TO263 -3-2 P- TO220 -3-1 • dv/dt rated Type Package Ordering Code Marking SPP80N06S2L-H5 P- TO220 -3-1 Q67060-S6054 2N06LH5 SPB80N06S2L-H5 P- TO263 -3-2 Q67060-S6055 2N06LH5 Maximum Ratings, a

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